Р–i–n-фотодіод на основі високоомного кремнію p-типу з підвищеною чутливістю на довжині хвилі 1060 нм
The paper presents the results of development, optimization and improvement of p–i–n photodiode technology based on high-resistance p-type silicon with increased responsivity at a wavelength of 1060 nm. The optimal material was selected and the technological modes optimal for solving the set task we...
Saved in:
| Date: | 2020 |
|---|---|
| Main Authors: | , , |
| Format: | Article |
| Language: | English |
| Published: |
PE "Politekhperiodika", Book and Journal Publishers
2020
|
| Subjects: | |
| Online Access: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2020.5-6.16 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Technology and design in electronic equipment |