Механизм насыщения тока стока полевого транзистора с р–n-переходом
The processes of drain current saturation in a p–n junction field‑effect transistor have been investigated. It is shown that, when analyzing saturation in a common‑source circuit or under self‑bias conditions, it is necessary to take into account the different voltage dependencies across the drain–g...
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| Datum: | 2006 |
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| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | Ukrainisch |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2006
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| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2006.5.58 |
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| Назва журналу: | Technology and design in electronic equipment |