Механизм насыщения тока стока полевого транзистора с р–n-переходом

The processes of drain current saturation in a p–n junction field‑effect transistor have been investigated. It is shown that, when analyzing saturation in a common‑source circuit or under self‑bias conditions, it is necessary to take into account the different voltage dependencies across the drain–g...

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Bibliographic Details
Date:2006
Main Author: Yodgorova, D. M.
Format: Article
Language:Ukrainian
Published: PE "Politekhperiodika", Book and Journal Publishers 2006
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Online Access:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2006.5.58
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Journal Title:Technology and design in electronic equipment

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Technology and design in electronic equipment

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