Прогнозирование разброса параметров полевых транзисторов с барьером Шоттки на GaAs

• Date: 2006
• Main Authors: Gorev, N. B., Kodzhespirova, I. F., Privalov, E. N.
• Format: Article
• Language: Ukrainian
• Published: PE "Politekhperiodika", Book and Journal Publishers 2006
• Subjects: арсенид галлия; полевой транзистор; барьер Шоттки; глубокие центры; ток насыщения; крутизна; напряжение отсечки; разброс параметров
• Online Access: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2006.4.36
• Journal Title: Technology and design in electronic equipment

It is shown that for Schottky-barrier field-effect transistors based on three-layer GaAs structures (film – buffer layer – substrate), the parameter spread caused by the nonuniform distribution of deep centers across the wafer can be characterized by a single quantity: the effective concentration of...