Оптимизация изготовления высоковольтного горизонтального р-канального МОП-транзистора

• Date: 2006
• Main Authors: Leonov, N. I., Lemeshevskaya, A. M., Dudar, N. L., Getzman, S. N.
• Format: Article
• Language: Ukrainian
• Published: PE "Politekhperiodika", Book and Journal Publishers 2006
• Subjects: рМОП-транзистор; технологический маршрут; моделирование
• Online Access: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2006.4.45
• Journal Title: Technology and design in electronic equipment

Simulation of semiconductor structures provides an opportunity to reduce manufacturing costs and optimize the parameters of integrated circuit elements and devices. To design integrated circuits with specified properties, it is necessary to obtain the required electrical characteristics of the circu...