Сенсоры на основе CdZnTe для измерений рентгеновского излучения
Sensors based on the wide-bandgap semiconductor compound CdZnTe have been investigated. The advantages of such sensors are demonstrated: a wide range of photon flux and energy measurement, high detection efficiency, and satisfactory energy resolution without the need for deep cooling. Devices based...
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| Datum: | 2006 |
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| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | Ukrainisch |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2006
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| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2006.2.23 |
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| Назва журналу: | Technology and design in electronic equipment |
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Technology and design in electronic equipment| Zusammenfassung: | Sensors based on the wide-bandgap semiconductor compound CdZnTe have been investigated. The advantages of such sensors are demonstrated: a wide range of photon flux and energy measurement, high detection efficiency, and satisfactory energy resolution without the need for deep cooling. Devices based on CdZnTe sensors are described, including a dosimeter for dose-rate monitoring and an X-ray spectrometer. The developed detection modules reliably register X-ray radiation starting from energies of 5 keV. |
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