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Сенсоры на основе CdZnTe для измерений рентгеновского излучения

Sensors based on the wide-bandgap semiconductor compound CdZnTe have been investigated. The advantages of such sensors are demonstrated: a wide range of photon flux and energy measurement, high detection efficiency, and satisfactory energy resolution without the need for deep cooling. Devices based...

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Bibliographic Details
Date:2006
Main Authors: Rybka, A. V., Zakharchenko, A. А., Davydov, L. N., Shlyakhov, I. N., Blinkin, A. A., Kutnyi, K. V.
Format: Article
Language:Ukrainian
Published: PE "Politekhperiodika", Book and Journal Publishers 2006
Subjects:
рентгеновское излучение
полупроводниковые сенсоры
CdTe
CdZnTe
дозиметрия
спектрометрия
детекторы
Online Access:https://www.tkea.com.ua/index.php/journal/article/view/TKEA2006.2.23
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Journal Title:Technology and design in electronic equipment

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Technology and design in electronic equipment
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Summary:Sensors based on the wide-bandgap semiconductor compound CdZnTe have been investigated. The advantages of such sensors are demonstrated: a wide range of photon flux and energy measurement, high detection efficiency, and satisfactory energy resolution without the need for deep cooling. Devices based on CdZnTe sensors are described, including a dosimeter for dose-rate monitoring and an X-ray spectrometer. The developed detection modules reliably register X-ray radiation starting from energies of 5 keV.

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