Исследование фотоэлектрических характеристик микрофототерминала
The results of a study of the photoelectric characteristics of a microphoto terminal consisting of a photodiode–diode structure with oppositely connected photo- and dark diodes are presented. It is shown that in the photogalvanic mode its parameters undergo insignificant changes, while in the photor...
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| Datum: | 2006 |
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| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | Ukrainisch |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2006
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| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2006.2.32 |
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| Назва журналу: | Technology and design in electronic equipment |
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Technology and design in electronic equipment| Zusammenfassung: | The results of a study of the photoelectric characteristics of a microphoto terminal consisting of a photodiode–diode structure with oppositely connected photo- and dark diodes are presented. It is shown that in the photogalvanic mode its parameters undergo insignificant changes, while in the photoreceptive mode it exhibits high photosensitivity. The proposed design of the elements is of interest for switching several photoelectric structures with minimal losses. |
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