Фотоэлектрические параметры гетеропереходов SnS₂–хSeₓ–InSe (0≤х≤1)
Heterojunctions SnS2–xSex–InSe were fabricated using the optical contact method of semiconductors. Their photoresponse spectrum narrows linearly with increasing x. The p–n junction is concentrated in InSe, and under equilibrium conditions it can be realized either as a conventional depletion mode (x...
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| Datum: | 2006 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | Ukrainisch |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2006
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| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2006.2.41 |
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| Назва журналу: | Technology and design in electronic equipment |
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Technology and design in electronic equipment| Zusammenfassung: | Heterojunctions SnS2–xSex–InSe were fabricated using the optical contact method of semiconductors. Their photoresponse spectrum narrows linearly with increasing x. The p–n junction is concentrated in InSe, and under equilibrium conditions it can be realized either as a conventional depletion mode (x > 0) or as an inversion conductivity mode (x = 0). The dependence of forward current on voltage in the heterojunctions corresponds to that of diodes with ideal characteristics. The obtained heterojunctions can be used as photodetectors. |
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