Фотоэлектрические параметры гетеропереходов SnS₂–хSeₓ–InSe (0≤х≤1)
Heterojunctions SnS2–xSex–InSe were fabricated using the optical contact method of semiconductors. Their photoresponse spectrum narrows linearly with increasing x. The p–n junction is concentrated in InSe, and under equilibrium conditions it can be realized either as a conventional depletion mode (x...
Збережено в:
| Дата: | 2006 |
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| Автори: | , |
| Формат: | Стаття |
| Мова: | Українська |
| Опубліковано: |
PE "Politekhperiodika", Book and Journal Publishers
2006
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| Теми: | |
| Онлайн доступ: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2006.2.41 |
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| Назва журналу: | Technology and design in electronic equipment |
Репозитарії
Technology and design in electronic equipment| Резюме: | Heterojunctions SnS2–xSex–InSe were fabricated using the optical contact method of semiconductors. Their photoresponse spectrum narrows linearly with increasing x. The p–n junction is concentrated in InSe, and under equilibrium conditions it can be realized either as a conventional depletion mode (x > 0) or as an inversion conductivity mode (x = 0). The dependence of forward current on voltage in the heterojunctions corresponds to that of diodes with ideal characteristics. The obtained heterojunctions can be used as photodetectors. |
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