Фотоэлектрические параметры гетеропереходов SnS₂–хSeₓ–InSe (0≤х≤1)

• Datum: 2006
• Hauptverfasser: Katerinchuk, V. N., Kovalyuk, M. Z.
• Format: Artikel
• Sprache: Ukrainisch
• Veröffentlicht: PE "Politekhperiodika", Book and Journal Publishers 2006
• Schlagworte: SnS₂; SnSe₂; InSe; гетеропереход; фотоэлектрические параметры
• Online Zugang: https://www.tkea.com.ua/index.php/journal/article/view/TKEA2006.2.41
• Назва журналу: Technology and design in electronic equipment

Heterojunctions SnS2–xSex–InSe were fabricated using the optical contact method of semiconductors. Their photoresponse spectrum narrows linearly with increasing x. The p–n junction is concentrated in InSe, and under equilibrium conditions it can be realized either as a conventional depletion mode (x...