Особенности топологии поверхности слоистых кристаллов In₄Se₃
The surface morphology of In₄Se₃ crystals has been investigated using scanning electron and tunneling microscopy. The surface shows virtually no relief fluctuations except for a cluster structure on the nanometer scale. After cleavage, a small number of extended defects of micrometer size were also...
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| Datum: | 2006 |
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| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | Ukrainisch |
| Veröffentlicht: |
PE "Politekhperiodika", Book and Journal Publishers
2006
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| Schlagworte: | |
| Online Zugang: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2006.2.63 |
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| Назва журналу: | Technology and design in electronic equipment |
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Technology and design in electronic equipment| Zusammenfassung: | The surface morphology of In₄Se₃ crystals has been investigated using scanning electron and tunneling microscopy. The surface shows virtually no relief fluctuations except for a cluster structure on the nanometer scale. After cleavage, a small number of extended defects of micrometer size were also detected on the surface. The surface roughness is practically ideal for the formation of sharp heterojunctions when used as a substrate. |
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