Газочувствительные структуры "силицид кобальта – пористый кремний – кремний"
The phenomena of local nucleation and subsequent lateral crystallization of the CoSi2 silicide phase on the surface of porous silicon have been studied. A technology for forming a metallic electrode grid based on cobalt silicide for gas-sensitive surface-barrier silicon structures is proposed. Mult...
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| Date: | 2006 |
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| Main Authors: | , , |
| Format: | Article |
| Language: | Ukrainian |
| Published: |
PE "Politekhperiodika", Book and Journal Publishers
2006
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| Subjects: | |
| Online Access: | https://www.tkea.com.ua/index.php/journal/article/view/TKEA2006.1.34 |
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| Journal Title: | Technology and design in electronic equipment |
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Technology and design in electronic equipment| Summary: | The phenomena of local nucleation and subsequent lateral crystallization of the CoSi2 silicide phase on the surface of porous silicon have been studied. A technology for forming a metallic electrode grid based on cobalt silicide for gas-sensitive surface-barrier silicon structures is proposed. Multilayer film structures "cobalt silicide – porous silicon – silicon" exhibit sensor properties and can be used as elements of gas sensors.
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