Model of heterotransistor with quantum dots

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Бібліографічні деталі
Дата:	2010
Автори:	V. I. Timofeyev, E. M. Faleyeva
Формат:	Стаття
Мова:	English
Опубліковано:	2010
Назва видання:	Semiconductor Physics, Quantum Electronics and Optoelectronics
Онлайн доступ:	http://jnas.nbuv.gov.ua/article/UJRN-0000349245
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Назва журналу:	Library portal of National Academy of Sciences of Ukraine \| LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS

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spelling	open-sciencenbuvgovua-1000742024-04-17T17:55:04Z Model of heterotransistor with quantum dots V. I. Timofeyev E. M. Faleyeva 1560-8034 2010 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0000349245 Article
institution	Library portal of National Academy of Sciences of Ukraine \| LibNAS
collection	Open-Science
language	English
series	Semiconductor Physics, Quantum Electronics and Optoelectronics
spellingShingle	Semiconductor Physics, Quantum Electronics and Optoelectronics V. I. Timofeyev E. M. Faleyeva Model of heterotransistor with quantum dots
format	Article
author	V. I. Timofeyev E. M. Faleyeva
author_facet	V. I. Timofeyev E. M. Faleyeva
author_sort	V. I. Timofeyev
title	Model of heterotransistor with quantum dots
title_short	Model of heterotransistor with quantum dots
title_full	Model of heterotransistor with quantum dots
title_fullStr	Model of heterotransistor with quantum dots
title_full_unstemmed	Model of heterotransistor with quantum dots
title_sort	model of heterotransistor with quantum dots
publishDate	2010
url	http://jnas.nbuv.gov.ua/article/UJRN-0000349245
work_keys_str_mv	AT vitimofeyev modelofheterotransistorwithquantumdots AT emfaleyeva modelofheterotransistorwithquantumdots
first_indexed	2024-04-18T05:40:34Z
last_indexed	2024-04-18T05:40:34Z
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