Model of heterotransistor with quantum dots

Збережено в:
Бібліографічні деталі
Дата:2010
Автори: V. I. Timofeyev, E. M. Faleyeva
Формат: Стаття
Мова:Англійська
Опубліковано: 2010
Назва видання:Semiconductor Physics, Quantum Electronics and Optoelectronics
Онлайн доступ:http://jnas.nbuv.gov.ua/article/UJRN-0000349245
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Назва журналу:Library portal of National Academy of Sciences of Ukraine | LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS
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author V. I. Timofeyev
E. M. Faleyeva
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E. M. Faleyeva
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spelling open-sciencenbuvgovua-1000742024-04-17T17:55:04Z Model of heterotransistor with quantum dots V. I. Timofeyev E. M. Faleyeva 1560-8034 2010 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0000349245 Article
spellingShingle Semiconductor Physics, Quantum Electronics and Optoelectronics
V. I. Timofeyev
E. M. Faleyeva
Model of heterotransistor with quantum dots
title Model of heterotransistor with quantum dots
title_full Model of heterotransistor with quantum dots
title_fullStr Model of heterotransistor with quantum dots
title_full_unstemmed Model of heterotransistor with quantum dots
title_short Model of heterotransistor with quantum dots
title_sort model of heterotransistor with quantum dots
url http://jnas.nbuv.gov.ua/article/UJRN-0000349245
work_keys_str_mv AT vitimofeyev modelofheterotransistorwithquantumdots
AT emfaleyeva modelofheterotransistorwithquantumdots