Model of heterotransistor with quantum dots

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Bibliographic Details
Date:2010
Main Authors: V. I. Timofeyev, E. M. Faleyeva
Format: Article
Language:English
Published: 2010
Series:Semiconductor Physics, Quantum Electronics and Optoelectronics
Online Access:http://jnas.nbuv.gov.ua/article/UJRN-0000349245
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Journal Title:Library portal of National Academy of Sciences of Ukraine | LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS
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author V. I. Timofeyev
E. M. Faleyeva
author_facet V. I. Timofeyev
E. M. Faleyeva
author_sort V. I. Timofeyev
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institution Library portal of National Academy of Sciences of Ukraine | LibNAS
language English
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series Semiconductor Physics, Quantum Electronics and Optoelectronics
spelling open-sciencenbuvgovua-1000742024-04-17T17:55:04Z Model of heterotransistor with quantum dots V. I. Timofeyev E. M. Faleyeva 1560-8034 2010 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0000349245 Article
spellingShingle Semiconductor Physics, Quantum Electronics and Optoelectronics
V. I. Timofeyev
E. M. Faleyeva
Model of heterotransistor with quantum dots
title Model of heterotransistor with quantum dots
title_full Model of heterotransistor with quantum dots
title_fullStr Model of heterotransistor with quantum dots
title_full_unstemmed Model of heterotransistor with quantum dots
title_short Model of heterotransistor with quantum dots
title_sort model of heterotransistor with quantum dots
url http://jnas.nbuv.gov.ua/article/UJRN-0000349245
work_keys_str_mv AT vitimofeyev modelofheterotransistorwithquantumdots
AT emfaleyeva modelofheterotransistorwithquantumdots