A non-destructive method for measuring the depth of occurrence of the p-n junction of semiconductor photoelectric structures
Збережено в:
| Дата: | 2010 |
|---|---|
| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
2010
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| Назва видання: | Physical surface engineering |
| Онлайн доступ: | http://jnas.nbuv.gov.ua/article/UJRN-0000877911 |
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| Назва журналу: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
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Library portal of National Academy of Sciences of Ukraine | LibNAS| id |
open-sciencenbuvgovua-101760 |
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open-sciencenbuvgovua-1017602024-04-17T18:06:56Z A non-destructive method for measuring the depth of occurrence of the p-n junction of semiconductor photoelectric structures R. Aliev E. Mukhtarov L. Olimov 1999-8074 2010 en Physical surface engineering http://jnas.nbuv.gov.ua/article/UJRN-0000877911 Article |
| institution |
Library portal of National Academy of Sciences of Ukraine | LibNAS |
| collection |
Open-Science |
| language |
English |
| series |
Physical surface engineering |
| spellingShingle |
Physical surface engineering R. Aliev E. Mukhtarov L. Olimov A non-destructive method for measuring the depth of occurrence of the p-n junction of semiconductor photoelectric structures |
| format |
Article |
| author |
R. Aliev E. Mukhtarov L. Olimov |
| author_facet |
R. Aliev E. Mukhtarov L. Olimov |
| author_sort |
R. Aliev |
| title |
A non-destructive method for measuring the depth of occurrence of the p-n junction of semiconductor photoelectric structures |
| title_short |
A non-destructive method for measuring the depth of occurrence of the p-n junction of semiconductor photoelectric structures |
| title_full |
A non-destructive method for measuring the depth of occurrence of the p-n junction of semiconductor photoelectric structures |
| title_fullStr |
A non-destructive method for measuring the depth of occurrence of the p-n junction of semiconductor photoelectric structures |
| title_full_unstemmed |
A non-destructive method for measuring the depth of occurrence of the p-n junction of semiconductor photoelectric structures |
| title_sort |
non-destructive method for measuring the depth of occurrence of the p-n junction of semiconductor photoelectric structures |
| publishDate |
2010 |
| url |
http://jnas.nbuv.gov.ua/article/UJRN-0000877911 |
| work_keys_str_mv |
AT raliev anondestructivemethodformeasuringthedepthofoccurrenceofthepnjunctionofsemiconductorphotoelectricstructures AT emukhtarov anondestructivemethodformeasuringthedepthofoccurrenceofthepnjunctionofsemiconductorphotoelectricstructures AT lolimov anondestructivemethodformeasuringthedepthofoccurrenceofthepnjunctionofsemiconductorphotoelectricstructures AT raliev nondestructivemethodformeasuringthedepthofoccurrenceofthepnjunctionofsemiconductorphotoelectricstructures AT emukhtarov nondestructivemethodformeasuringthedepthofoccurrenceofthepnjunctionofsemiconductorphotoelectricstructures AT lolimov nondestructivemethodformeasuringthedepthofoccurrenceofthepnjunctionofsemiconductorphotoelectricstructures |
| first_indexed |
2024-04-18T05:47:35Z |
| last_indexed |
2024-04-18T05:47:35Z |
| _version_ |
1796887898813890560 |