A non-destructive method for measuring the depth of occurrence of the p-n junction of semiconductor photoelectric structures

A non-destructive method for measuring the depth of occurrence of the p-n junction of semiconductor photoelectric structures

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Bibliographic Details
Date:2010
Main Authors: R. Aliev, E. Mukhtarov, L. Olimov
Format: Article
Language:English
Published: 2010
Series:Physical surface engineering
Online Access:http://jnas.nbuv.gov.ua/article/UJRN-0000877911
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Library portal of National Academy of Sciences of Ukraine | LibNAS
id open-sciencenbuvgovua-101760
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spelling open-sciencenbuvgovua-1017602024-04-17T18:06:56Z A non-destructive method for measuring the depth of occurrence of the p-n junction of semiconductor photoelectric structures R. Aliev E. Mukhtarov L. Olimov 1999-8074 2010 en Physical surface engineering http://jnas.nbuv.gov.ua/article/UJRN-0000877911 Article
institution Library portal of National Academy of Sciences of Ukraine | LibNAS
collection Open-Science
language English
series Physical surface engineering
spellingShingle Physical surface engineering
R. Aliev
E. Mukhtarov
L. Olimov
A non-destructive method for measuring the depth of occurrence of the p-n junction of semiconductor photoelectric structures
format Article
author R. Aliev
E. Mukhtarov
L. Olimov
author_facet R. Aliev
E. Mukhtarov
L. Olimov
author_sort R. Aliev
title A non-destructive method for measuring the depth of occurrence of the p-n junction of semiconductor photoelectric structures
title_short A non-destructive method for measuring the depth of occurrence of the p-n junction of semiconductor photoelectric structures
title_full A non-destructive method for measuring the depth of occurrence of the p-n junction of semiconductor photoelectric structures
title_fullStr A non-destructive method for measuring the depth of occurrence of the p-n junction of semiconductor photoelectric structures
title_full_unstemmed A non-destructive method for measuring the depth of occurrence of the p-n junction of semiconductor photoelectric structures
title_sort non-destructive method for measuring the depth of occurrence of the p-n junction of semiconductor photoelectric structures
publishDate 2010
url http://jnas.nbuv.gov.ua/article/UJRN-0000877911
work_keys_str_mv AT raliev anondestructivemethodformeasuringthedepthofoccurrenceofthepnjunctionofsemiconductorphotoelectricstructures
AT emukhtarov anondestructivemethodformeasuringthedepthofoccurrenceofthepnjunctionofsemiconductorphotoelectricstructures
AT lolimov anondestructivemethodformeasuringthedepthofoccurrenceofthepnjunctionofsemiconductorphotoelectricstructures
AT raliev nondestructivemethodformeasuringthedepthofoccurrenceofthepnjunctionofsemiconductorphotoelectricstructures
AT emukhtarov nondestructivemethodformeasuringthedepthofoccurrenceofthepnjunctionofsemiconductorphotoelectricstructures
AT lolimov nondestructivemethodformeasuringthedepthofoccurrenceofthepnjunctionofsemiconductorphotoelectricstructures
first_indexed 2025-07-22T15:43:58Z
last_indexed 2025-07-22T15:43:58Z
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