A non-destructive method for measuring the depth of occurrence of the p-n junction of semiconductor photoelectric structures
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| Date: | 2010 |
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| Main Authors: | , , |
| Format: | Article |
| Language: | English |
| Published: |
2010
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| Series: | Physical surface engineering |
| Online Access: | http://jnas.nbuv.gov.ua/article/UJRN-0000877911 |
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| Journal Title: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
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Library portal of National Academy of Sciences of Ukraine | LibNAS| _version_ | 1859603789610221568 |
|---|---|
| author | R. Aliev E. Mukhtarov L. Olimov |
| author_facet | R. Aliev E. Mukhtarov L. Olimov |
| author_sort | R. Aliev |
| collection | Open-Science |
| first_indexed | 2025-07-22T15:43:58Z |
| format | Article |
| id | open-sciencenbuvgovua-101760 |
| institution | Library portal of National Academy of Sciences of Ukraine | LibNAS |
| language | English |
| last_indexed | 2025-07-22T15:43:58Z |
| publishDate | 2010 |
| record_format | dspace |
| series | Physical surface engineering |
| spelling | open-sciencenbuvgovua-1017602024-04-17T18:06:56Z A non-destructive method for measuring the depth of occurrence of the p-n junction of semiconductor photoelectric structures R. Aliev E. Mukhtarov L. Olimov 1999-8074 2010 en Physical surface engineering http://jnas.nbuv.gov.ua/article/UJRN-0000877911 Article |
| spellingShingle | Physical surface engineering R. Aliev E. Mukhtarov L. Olimov A non-destructive method for measuring the depth of occurrence of the p-n junction of semiconductor photoelectric structures |
| title | A non-destructive method for measuring the depth of occurrence of the p-n junction of semiconductor photoelectric structures |
| title_full | A non-destructive method for measuring the depth of occurrence of the p-n junction of semiconductor photoelectric structures |
| title_fullStr | A non-destructive method for measuring the depth of occurrence of the p-n junction of semiconductor photoelectric structures |
| title_full_unstemmed | A non-destructive method for measuring the depth of occurrence of the p-n junction of semiconductor photoelectric structures |
| title_short | A non-destructive method for measuring the depth of occurrence of the p-n junction of semiconductor photoelectric structures |
| title_sort | non-destructive method for measuring the depth of occurrence of the p-n junction of semiconductor photoelectric structures |
| url | http://jnas.nbuv.gov.ua/article/UJRN-0000877911 |
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