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Model of the grain boundary in p-n-structures based on polycrystalline semiconductors

Model of the grain boundary in p-n-structures based on polycrystalline semiconductors

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Bibliographic Details
Main Author: L. O. Olimov
Format: Article
Language:English
Published: 2010
Series:Physical surface engineering
Online Access:http://jnas.nbuv.gov.ua/article/UJRN-0000877912
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id open-sciencenbuvgovua-101761
record_format dspace
spelling open-sciencenbuvgovua-1017612024-04-17T18:06:56Z Model of the grain boundary in p-n-structures based on polycrystalline semiconductors L. O. Olimov 1999-8074 2010 en Physical surface engineering http://jnas.nbuv.gov.ua/article/UJRN-0000877912 Article
institution Library portal of National Academy of Sciences of Ukraine | LibNAS
collection Open-Science
language English
series Physical surface engineering
spellingShingle Physical surface engineering
L. O. Olimov
Model of the grain boundary in p-n-structures based on polycrystalline semiconductors
format Article
author L. O. Olimov
author_facet L. O. Olimov
author_sort L. O. Olimov
title Model of the grain boundary in p-n-structures based on polycrystalline semiconductors
title_short Model of the grain boundary in p-n-structures based on polycrystalline semiconductors
title_full Model of the grain boundary in p-n-structures based on polycrystalline semiconductors
title_fullStr Model of the grain boundary in p-n-structures based on polycrystalline semiconductors
title_full_unstemmed Model of the grain boundary in p-n-structures based on polycrystalline semiconductors
title_sort model of the grain boundary in p-n-structures based on polycrystalline semiconductors
publishDate 2010
url http://jnas.nbuv.gov.ua/article/UJRN-0000877912
work_keys_str_mv AT loolimov modelofthegrainboundaryinpnstructuresbasedonpolycrystallinesemiconductors
first_indexed 2024-04-18T05:47:35Z
last_indexed 2024-04-18T05:47:35Z
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