Model of the grain boundary in p-n-structures based on polycrystalline semiconductors

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Datum:2010
1. Verfasser: L. O. Olimov
Format: Artikel
Sprache:Englisch
Veröffentlicht: 2010
Schriftenreihe:Physical surface engineering
Online Zugang:http://jnas.nbuv.gov.ua/article/UJRN-0000877912
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Назва журналу:Library portal of National Academy of Sciences of Ukraine | LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS
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author L. O. Olimov
author_facet L. O. Olimov
author_sort L. O. Olimov
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institution Library portal of National Academy of Sciences of Ukraine | LibNAS
language English
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publishDate 2010
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spelling open-sciencenbuvgovua-1017612024-04-17T18:06:56Z Model of the grain boundary in p-n-structures based on polycrystalline semiconductors L. O. Olimov 1999-8074 2010 en Physical surface engineering http://jnas.nbuv.gov.ua/article/UJRN-0000877912 Article
spellingShingle Physical surface engineering
L. O. Olimov
Model of the grain boundary in p-n-structures based on polycrystalline semiconductors
title Model of the grain boundary in p-n-structures based on polycrystalline semiconductors
title_full Model of the grain boundary in p-n-structures based on polycrystalline semiconductors
title_fullStr Model of the grain boundary in p-n-structures based on polycrystalline semiconductors
title_full_unstemmed Model of the grain boundary in p-n-structures based on polycrystalline semiconductors
title_short Model of the grain boundary in p-n-structures based on polycrystalline semiconductors
title_sort model of the grain boundary in p-n-structures based on polycrystalline semiconductors
url http://jnas.nbuv.gov.ua/article/UJRN-0000877912
work_keys_str_mv AT loolimov modelofthegrainboundaryinpnstructuresbasedonpolycrystallinesemiconductors