Model of the grain boundary in p-n-structures based on polycrystalline semiconductors
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| Datum: | 2010 |
|---|---|
| 1. Verfasser: | |
| Format: | Artikel |
| Sprache: | Englisch |
| Veröffentlicht: |
2010
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| Schriftenreihe: | Physical surface engineering |
| Online Zugang: | http://jnas.nbuv.gov.ua/article/UJRN-0000877912 |
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| Назва журналу: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
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Library portal of National Academy of Sciences of Ukraine | LibNAS| _version_ | 1859603789640630272 |
|---|---|
| author | L. O. Olimov |
| author_facet | L. O. Olimov |
| author_sort | L. O. Olimov |
| collection | Open-Science |
| first_indexed | 2025-07-22T15:43:59Z |
| format | Article |
| id | open-sciencenbuvgovua-101761 |
| institution | Library portal of National Academy of Sciences of Ukraine | LibNAS |
| language | English |
| last_indexed | 2025-07-22T15:43:59Z |
| publishDate | 2010 |
| record_format | dspace |
| series | Physical surface engineering |
| spelling | open-sciencenbuvgovua-1017612024-04-17T18:06:56Z Model of the grain boundary in p-n-structures based on polycrystalline semiconductors L. O. Olimov 1999-8074 2010 en Physical surface engineering http://jnas.nbuv.gov.ua/article/UJRN-0000877912 Article |
| spellingShingle | Physical surface engineering L. O. Olimov Model of the grain boundary in p-n-structures based on polycrystalline semiconductors |
| title | Model of the grain boundary in p-n-structures based on polycrystalline semiconductors |
| title_full | Model of the grain boundary in p-n-structures based on polycrystalline semiconductors |
| title_fullStr | Model of the grain boundary in p-n-structures based on polycrystalline semiconductors |
| title_full_unstemmed | Model of the grain boundary in p-n-structures based on polycrystalline semiconductors |
| title_short | Model of the grain boundary in p-n-structures based on polycrystalline semiconductors |
| title_sort | model of the grain boundary in p-n-structures based on polycrystalline semiconductors |
| url | http://jnas.nbuv.gov.ua/article/UJRN-0000877912 |
| work_keys_str_mv | AT loolimov modelofthegrainboundaryinpnstructuresbasedonpolycrystallinesemiconductors |