Cover Image

Influence of atomic disorder on the auger recombination rate in p-InGaN alloys

Saved in:

Bibliographic Details
Date:	2020
Main Authors:	A. V. Zinovchuk, Ye. O. Sevostianov
Format:	Article
Language:	English
Published:	2020
Series:	Ukrainian Journal of Physics
Online Access:	http://jnas.nbuv.gov.ua/article/UJRN-0001127922
Tags:	Add Tag No Tags, Be the first to tag this record!
Journal Title:	Library portal of National Academy of Sciences of Ukraine \| LibNAS

Institution

Library portal of National Academy of Sciences of Ukraine | LibNAS

Similar Items

Influence of atomic disorder on the auger recombination rate in p-InGaN alloys
by: A. V. Zinovchuk, et al.
Published: (2020)

The composition effect on the bowing parameter in the cubic InGaN, AlGaN and AlInN alloys
by: Berrah, S., et al.
Published: (2008)

Effect of neutron irradiation on characteristics of power InGaN/GaN light-emitting diodes
by: O. I. Vlasenko, et al.
Published: (2015)

X-ray diffraction study of deformation state in InGaN/GaN multilayered structures
by: V. P. Kladko, et al.
Published: (2010)

X-ray diffraction study of deformation state in InGaN/GaN multilayered structures
by: Kladko, V.P., et al.
Published: (2010)

Influence of electron irradiation with E = 2 MeV on electrophysical and optical characteristics of green InGaN/GaN LEDs
by: T. I. Mosiuk, et al.
Published: (2023)

Epitaxial InGaN nanostructures grown in pores of anodic aluminium oxide on Si
by: G. G. Gorokh, et al.
Published: (2011)

Эпитаксиальные наноструктуры InGaN, выращенные в порах анодного оксида алюминия на Si
by: Горох, Г.Г., et al.
Published: (2011)

Influencing of surfacing chips on extraction of radiation of superbright light emitting diodes on heterostructures InGaN/Al2O3
by: V. I. Osinskij, et al.
Published: (2003)

Radiative recombination in initial and electron-irradiated GaP crystals
by: O. Hontaruk, et al.
Published: (2010)

Radiative recombination in initial and electron-irradiated GaP crystals
by: Hontaruk, O., et al.
Published: (2010)

Features of Auger-emission in channeling
by: I. A. Kossko, et al.
Published: (2014)

Auger Spectra and Different Ionic Charges Following 3s, 3p and 3d Sub-Shells Photoionization of Kr Atoms
by: Lotfy, Y.A, et al.
Published: (2006)

Features of Auger-emission in channeling
by: Kossko, I.A., et al.
Published: (2014)

Влияние обработки поверхности чипов на экстракцию излучения сверхъярких светодиодов на гетероструктурах InGaN/Al₂O₃
by: Осинский, В.И., et al.
Published: (2003)

Effect of structure disordered medium on the kinetics of germinate recombination
by: V. P. Shkilev, et al.
Published: (2015)

Photoconverters with microrelief p-n-junction on a basis of p AlxGa₁₋x-p GaAs-n GaAs-n⁺ GaAs heterojunction
by: Karimov, A.V., et al.
Published: (2005)

Atomic disordering and electron band structure in the Heusler alloy CoTiSb
by: V. M. Uvarov, et al.
Published: (2017)

Atomic disordering and electron band structure in the Heusler alloy CoTiSb
by: V. N. Uvarov, et al.
Published: (2017)

Effect of pulsing magnetic field on radiative recombination spectra of GaP and InP single crystals
by: Milenin, V.V., et al.
Published: (2010)

Effect of pulsing magnetic field on radiative recombination spectra of GaP and InP single crystals
by: V. V. Milenin, et al.
Published: (2010)

Self-associated atomic groups in Ga–Sn liquid alloys
by: R. Bilyk, et al.
Published: (2021)

Self-associated atomic groups in Ga–Sn liquid alloys
by: R. Bilyk, et al.
Published: (2021)

Excitation dynamics of the 5p6 auger spectra in Ba + e– collisions
by: O. O. Borovik
Published: (2024)

Excitation dynamics of the 5p6 auger spectra in Ba + e– collisions
by: O. O. Borovik
Published: (2024)

Influence of surface centers on the effective surface recombination rate and the parameters of silicon solar cells
by: V. P. Kostylyov, et al.
Published: (2013)

Influence of surface centers on the effective surface recombination rate and the parameters of silicon solar cells
by: V. P. Kostylov, et al.
Published: (2013)

Results from the Pierre Auger Observatory
by: R. Љmнda
Published: (2012)

Характеристика та функціоналізація потрійної наноповерхні InGaN для системи накопичення енергії в основах сонячних елементів: дослідження методом молекулярного моделювання
by: Mollaamin, F.
Published: (2025)

The Pierre Auger observatory: Studying the highest energy frontier
by: I. Valiño
Published: (2019)

The Pierre Auger observatory: Studying the highest energy frontier
by: I. Valiño
Published: (2019)

Physical mechanisms and models of long-term transformations of radiative recombination in n-GaAs due to the magnetic field treatments
by: Milenin, G.V., et al.
Published: (2016)

Physical mechanisms and models of long-term transformations of radiative recombination in n-GaAs due to the magnetic field treatments
by: G. V. Milenin, et al.
Published: (2016)

Physical mechanisms and models of the long-term transformations in radiative recombination observed in n-GaAs under microwave irradiation
by: G. V. Milenin, et al.
Published: (2016)

Physical mechanisms and models of the long-term transformations in radiative recombination observed in n-GaAs under microwave irradiation
by: Milenin, G.V., et al.
Published: (2016)

Influence of tin impurity on recombination characteristics in γ-irradiated n-Si
by: M. M. Krasko
Published: (2012)

Influence of tin impurity on recombination characteristics in γ-irradiated n-Si
by: M. M. Krasko
Published: (2012)

Фотоелектричні властивості подвійних гетеропереходів p+-InP/n-InGaAsP/n-InP
by: Круковський, C.I., et al.
Published: (2012)

Исследование термометрических характеристик GaP-диодов p+–n-типа
by: Krasnov, V. A., et al.
Published: (2008)

Reduction of recombination losses in near-surface diffusion emitter layers of photosensitive silicon n+-p-p+ structures
by: V. P. Kostylyov, et al.
Published: (2023)