Peculiarities of physical processes of formation of silicon surface-barrier structures
Gespeichert in:
| Datum: | 2024 |
|---|---|
| Hauptverfasser: | G. P. Gaidar, S. V. Berdnichenko, V. G. Vorobyov, V. I. Kochkin, V. F. Lastovetskiy, P. G. Litovchenko |
| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
2024
|
| Schriftenreihe: | Reports of the National Academy of Sciences of Ukraine |
| Online Zugang: | http://jnas.nbuv.gov.ua/article/UJRN-0001486323 |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Назва журналу: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Institution
Library portal of National Academy of Sciences of Ukraine | LibNASÄhnliche Einträge
-
Influence of the surface electronic processes on the spectrometric characteristics of silicon detectors
von: Gaidar, G.P., et al.
Veröffentlicht: (2016) -
Optimization of technology for fabrication of sectional nuclear radiation detectors based on high-resistance silicon
von: Gaidar, G.P., et al.
Veröffentlicht: (2017) -
The kinetic of point defect transformation during the annealing process in electron-irradiated silicon
von: G. P. Gaidar, et al.
Veröffentlicht: (2011) -
The kinetic of point defect transformation during the annealing process in electron-irradiated silicon
von: Gaidar, G.P., et al.
Veröffentlicht: (2011) -
Study on the formation of current characteristics of a silicon photodiode with rectifying barriers
von: A. V. Karimov, et al.
Veröffentlicht: (2013)