Peculiarities of physical processes of formation of silicon surface-barrier structures
Saved in:
| Date: | 2024 |
|---|---|
| Main Authors: | G. P. Gaidar, S. V. Berdnichenko, V. G. Vorobyov, V. I. Kochkin, V. F. Lastovetskiy, P. G. Litovchenko |
| Format: | Article |
| Language: | English |
| Published: |
2024
|
| Series: | Reports of the National Academy of Sciences of Ukraine |
| Online Access: | http://jnas.nbuv.gov.ua/article/UJRN-0001486323 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Institution
Library portal of National Academy of Sciences of Ukraine | LibNASSimilar Items
Optimization of technology for fabrication of sectional nuclear radiation detectors based on high-resistance silicon
by: Gaidar, G.P., et al.
Published: (2017)
by: Gaidar, G.P., et al.
Published: (2017)
The kinetic of point defect transformation during the annealing process in electron-irradiated silicon
by: Gaidar, G.P., et al.
Published: (2011)
by: Gaidar, G.P., et al.
Published: (2011)
The kinetic of point defect transformation during the annealing process in electron-irradiated silicon
by: G. P. Gaidar, et al.
Published: (2011)
by: G. P. Gaidar, et al.
Published: (2011)
Surface photovoltage spectroscopy research of solar silicon recombination parameters
by: V. G. Litovchenko
Published: (2015)
by: V. G. Litovchenko
Published: (2015)
Study on the formation of current characteristics of a silicon photodiode with rectifying barriers
by: A. V. Karimov, et al.
Published: (2013)
by: A. V. Karimov, et al.
Published: (2013)
Investigation of the effect of potential barriers on mechanisms current transfer in meetings of two-barrier silicon structures
by: O. A. Abdulkhaev, et al.
Published: (2011)
by: O. A. Abdulkhaev, et al.
Published: (2011)
Exciton effects in band-edge electroluminescence of silicon barrier structures
by: Sachenko, A.V., et al.
Published: (2004)
by: Sachenko, A.V., et al.
Published: (2004)
Features of piezoresistance in heavily doped n-silicon crystals
by: Gaidar, G.P.
Published: (2013)
by: Gaidar, G.P.
Published: (2013)
Features of piezoresistance in heavily doped n-silicon crystals
by: G. P. Gaidar
Published: (2013)
by: G. P. Gaidar
Published: (2013)
The peculiarities of the influence of physical fields on the processes of structure formation and properties of polymer systems
by: V. O. Ovsiankina
Published: (2015)
by: V. O. Ovsiankina
Published: (2015)
Photopleochroism of surface-barrier structures based on semiinsulating cadmium telluride
by: Ilchuk, G.A.
Published: (2000)
by: Ilchuk, G.A.
Published: (2000)
Control of the electrophysical characteristics of two-barrier silicon structures with a nanostructured base using gamma radiation
by: Madatov, R.S., et al.
Published: (2023)
by: Madatov, R.S., et al.
Published: (2023)
Peculiarities of surface photoconductivity relaxation in the structures of macroporous silicon in the visible spectrum
by: M. I. Karas, et al.
Published: (2020)
by: M. I. Karas, et al.
Published: (2020)
Investigation of the influence of isovalent impurity of silicon and y-irradiation (⁶⁰Co) on electrophysical parameters of n-Ge <Sb>
by: Gaidar, G.P.
Published: (2014)
by: Gaidar, G.P.
Published: (2014)
Investigation of the influence of isovalent impurity of silicon and -irradiation (60Co) on electrophysical parameters of n-Ge Sb
by: G. P. Gaidar
Published: (2014)
by: G. P. Gaidar
Published: (2014)
Peculiarities of nanocrystalline silicon films growth on porous anodic alumina surface
by: P. V. Parfenyuk, et al.
Published: (2017)
by: P. V. Parfenyuk, et al.
Published: (2017)
Peculiarities of nanocrystalline silicon films growth on porous anodic alumina surface
by: Parfenyuk, P.V., et al.
Published: (2017)
by: Parfenyuk, P.V., et al.
Published: (2017)
Mechanism of adsorption-catalytic activity at the nanostructured surface of silicon doped with clusters of transition metals and their oxides
by: V. G. Litovchenko, et al.
Published: (2017)
by: V. G. Litovchenko, et al.
Published: (2017)
Features of tensoresistance in single crystals of germanium and silicon with different dopants
by: Baranskii, P.I., et al.
Published: (2016)
by: Baranskii, P.I., et al.
Published: (2016)
Features of tensoresistance in single crystals of germanium and silicon with different dopants
by: P. I. Baranskii, et al.
Published: (2016)
by: P. I. Baranskii, et al.
Published: (2016)
Physical-chemical processes in castings with wear-resistant surface alloying
by: A. G. Kovalchuk, et al.
Published: (2018)
by: A. G. Kovalchuk, et al.
Published: (2018)
Negative photoconductivity and surface-barrier photodiode effect – two interrelated sur-face photoeffects in macroporous silicon
by: N. I. Karas
Published: (2014)
by: N. I. Karas
Published: (2014)
Radiation-induced effects in silicon
by: Gaidar, G.P., et al.
Published: (2019)
by: Gaidar, G.P., et al.
Published: (2019)
Formation of silicon nanoclusters in buried ultra-thin oxide layers
by: O. S. Oberemok, et al.
Published: (2011)
by: O. S. Oberemok, et al.
Published: (2011)
Studying of properties of silicon junctions with the Schottky barrier fabricated on the base of amorphous and polycrystalline various metal alloys
by: I. G. Pashaev
Published: (2012)
by: I. G. Pashaev
Published: (2012)
Nuclear microanalysis study of surface nanolayers in gold-silicon structures
by: V. I. Soroka, et al.
Published: (2013)
by: V. I. Soroka, et al.
Published: (2013)
Effect of thermal treatment on drag Seebeck coefficient anisotropy parameter of transmutation-doped silicon crystal
by: G. P. Gaidar, et al.
Published: (2016)
by: G. P. Gaidar, et al.
Published: (2016)
Effect of silicon on structure formation in liquid Fe-C alloys
by: V. S. Luchkin, et al.
Published: (2012)
by: V. S. Luchkin, et al.
Published: (2012)
Influence of neutron irradiation on elctrooptical and structural properties of silicon
by: Groza, A.A., et al.
Published: (2001)
by: Groza, A.A., et al.
Published: (2001)
Dependence of the anisotropy parameter of drag thermo-emf on the impurity concentration in the n-type germanium and silicon crystals
by: G. P. Gaidar, et al.
Published: (2017)
by: G. P. Gaidar, et al.
Published: (2017)
Dependence of the anisotropy parameter of drag thermo-emf on the impurity concentration in the n-type germanium and silicon crystals
by: Gaidar, G.P., et al.
Published: (2017)
by: Gaidar, G.P., et al.
Published: (2017)
Ozone generator based on surface dielectric barrier discharge with pulse power supply
by: Lozina, A.S., et al.
Published: (2023)
by: Lozina, A.S., et al.
Published: (2023)
Influence of nanostructured ITO films on surface recombination processes in silicon solar cells
by: V. P. Kostylyov, et al.
Published: (2015)
by: V. P. Kostylyov, et al.
Published: (2015)
Influence of nanostructured ITO films on surface recombination processes in silicon solar cells
by: Kostylyov, V.P., et al.
Published: (2015)
by: Kostylyov, V.P., et al.
Published: (2015)
Kinetics of plasmachemical processes in barrier discharge on ambient air
by: Soloshenko, I.A., et al.
Published: (2008)
by: Soloshenko, I.A., et al.
Published: (2008)
Recombination characteristics of single-crystalline silicon wafers with a damaged near-surface layer
by: A. V. Sachenko, et al.
Published: (2013)
by: A. V. Sachenko, et al.
Published: (2013)
Formation of nanocrystalline silicon in tin-doped amorphous silicon films
by: R. M. Rudenko, et al.
Published: (2020)
by: R. M. Rudenko, et al.
Published: (2020)
Peculiarities of current transport in titanium oxide-silicon heterostructures
by: Yu. S. Milovanov, et al.
Published: (2012)
by: Yu. S. Milovanov, et al.
Published: (2012)
Electrical and photoelectrical properties of the surface-barrier structures MoN/n-Si
by: M. M. Solovan, et al.
Published: (2019)
by: M. M. Solovan, et al.
Published: (2019)
Influence of the annealing of silicon crystals at 1200 °C on the Hall effect and magnetoresistance
by: Baranskyy, P.I., et al.
Published: (2002)
by: Baranskyy, P.I., et al.
Published: (2002)
Similar Items
-
Optimization of technology for fabrication of sectional nuclear radiation detectors based on high-resistance silicon
by: Gaidar, G.P., et al.
Published: (2017) -
The kinetic of point defect transformation during the annealing process in electron-irradiated silicon
by: Gaidar, G.P., et al.
Published: (2011) -
The kinetic of point defect transformation during the annealing process in electron-irradiated silicon
by: G. P. Gaidar, et al.
Published: (2011) -
Surface photovoltage spectroscopy research of solar silicon recombination parameters
by: V. G. Litovchenko
Published: (2015) -
Study on the formation of current characteristics of a silicon photodiode with rectifying barriers
by: A. V. Karimov, et al.
Published: (2013)