Cover Image

Study on phase characteristics of heterostructure por-Ga2O3/GaAs

Saved in:

Bibliographic Details
Date:	2024
Main Authors:	S. S. Kovachov, I. T. Bohdanov, D. S. Drozhcha, K. M. Tikhovod, V. V. Bondarenko, I. G. Kosogov, Ya. O. Suchikova
Format:	Article
Language:	English
Published:	2024
Series:	Chemistry, physics and technology of surface
Online Access:	http://jnas.nbuv.gov.ua/article/UJRN-0001504129
Tags:	Add Tag No Tags, Be the first to tag this record!
Journal Title:	Library portal of National Academy of Sciences of Ukraine \| LibNAS

Institution

Library portal of National Academy of Sciences of Ukraine | LibNAS

Similar Items

Дизайн та дослідження фазових характеристик гетероструктури por-Ga2O3/por-GaAs/mono-GaAs
by: Kovachov, S. S., et al.
Published: (2024)

2D magnetofermionic condensate in GaAs/AlGaAs heterostructures
by: L. V. Kulik, et al.
Published: (2017)

Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures
by: S. A. Iliash, et al.
Published: (2016)

Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures
by: Iliash, S.A., et al.
Published: (2016)

Insulator–quantum Hall transition in n-InGaAs/GaAs heterostructures
by: A. P. Savelev, et al.
Published: (2017)

Many-body effects in photoluminescence of heavily doped AlGaAs/InGaAs /GaAs heterostructures
by: Zhuchenko, Z.Ya., et al.
Published: (1999)

Coherence of Bose–Einstein condensate of dipolar excitons in GaAs/AlGaAs heterostructure
by: A. V. Gorbunov, et al.
Published: (2016)

Pseudomorphic modulation-doped AlGaAs/InGaAs/GaAs heterostructures with strong manifestation of many-body effects
by: Masselink, W.T., et al.
Published: (2000)

Magnetooptics of heterostructures with InGaAs/GaAs quantum well and a ferromagnetic Mn deltalayer
by: S. V. Zajtsev
Published: (2012)

Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy
by: Kladko, V.P., et al.
Published: (2000)

Electron mobility in the GaAs/InGaAs/GaAs quantum wells
by: Vainberg, V.V., et al.
Published: (2013)

Electron mobility in the GaAs/InGaAs/GaAs quantum wells
by: V. V. Vainberg, et al.
Published: (2013)

Excitonic parameters of InxGa1-xAs−GaAs heterostructures with quantum wells at low temperatures
by: N. M. Litovchenko, et al.
Published: (2013)

Excitonic parameters of InxGa1-xAs−GaAs heterostructures with quantum wells at low temperatures
by: N. M. Lytovchenko, et al.
Published: (2013)

Deep attachment levels in In0.4Ga0.6As/GaAs heterostructures with quantum dots
by: O. V. Vakulenko, et al.
Published: (2011)

Formation of β-SiC on por-Si/mono-Si surface according to Stranski - Krastanow mechanism
by: Y. O. Suchikova, et al.
Published: (2022)

Формування ?-SiC на поверхні por-Si/mono-Si за механізмом Странського – Крастанова
by: Suchikova, Y. O., et al.
Published: (2022)

A novel Al₀.₃₃Ga₀.₆₇As/In₀.₁₅Ga₀.₈₅As/GaAs quantum well Hall device grown on (111) GaAs
by: Sghaier, H., et al.
Published: (2012)

Properties of SiO₂-GaAs and Au-Ti-SiO₂-GaAs structures used in production of transmission lines
by: Boltovets, N.S., et al.
Published: (2002)

GaAs Gunn Diodes with AlAs-GaAs-AlAs Resonance Tunnel Cathode
by: Storozhenko, I. P., et al.
Published: (2013)

Obtaining and examination of heterostructure ZnO:Al/por-Si/Si
by: A. F. Diadenchuk, et al.
Published: (2020)

Photoconverters with microrelief p-n-junction on a basis of p AlxGa₁₋x-p GaAs-n GaAs-n⁺ GaAs heterojunction
by: Karimov, A.V., et al.
Published: (2005)

Effect of an InxGa1-xAs-GaAs blocking heterocathode metal contact on the GaAs TED operation
by: Arkusha, Yu. V., et al.
Published: (2013)

Effect of quantum dot shape of the GaAs/AlAs heterostructure on interlevel hole light absorption
by: Boichuk, V.I., et al.
Published: (2013)

Effects of the real-space transfer of charge carriers in the n-AlGaAs/GaAs heterostructures with the delta-layers of impurity in the barriers
by: V. V. Vainberg, et al.
Published: (2014)

Effects of the real-space transfer of charge carriers in the n-AlGaAs/GaAs heterostructures with the delta-layers of impurity in the barriers
by: V. V. Vainberg, et al.
Published: (2014)

Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures
by: Boltovets, N.S., et al.
Published: (2006)

Chemical polishing of InAs, InSb, GaAs and GaSb
by: Levchenko, I.V., et al.
Published: (2017)

Двумерный магнетофермионный конденсат в GaAs/AlGaAs гетероструктурах
by: Кулик, Л.В., et al.
Published: (2017)

Солнечные элементы на основе тандемных гетероструктур GaAs-InGaAs-AlGaAs
by: Круковский, С.И., et al.
Published: (2003)

Optical properties of GaAs/AlxGa1-xAs/GaAs quantum dot with off-central impurity driven by electric field
by: Holovatsky, V.A., et al.
Published: (2018)

Особенности квантовых эффектов в 2D-структурах GaAs/n-InGaAs/GaAs с двойными квантовыми ямами
by: Арапов, Ю.Г., et al.
Published: (2007)

Current and electroluminescence intensity oscillations under bipolar lateral electric transport in the double-GaAs/InGaAs/GaAs quantum wells
by: M. M. Vinoslavskii, et al.
Published: (2018)

Current and electroluminescence intensity oscillations under bipolar lateral electric transport in the double-GaAs/InGaAs/GaAs quantum wells
by: Vinoslavskii, M.M., et al.
Published: (2018)

Theory of high-field electron transport in the heterostructures AlxGa1-xAs/GaAs/AlxGa1-x with delta-doped barriers. Effect of real-space transfer
by: V. V. Korotyeyev
Published: (2015)

Characteristics of interface corrugations in short-period GaAs/AlAs superlattices
by: Daweritz, L., et al.
Published: (1998)

TiB₂/GaAs and Au-TiB₂/GaAs structural transformations at short-term thermal treatment
by: Kryshtab, T.G., et al.
Published: (1999)

Plateau–plateau transitions in the quantum Hall regime for a single quantum well heterostructure n-InGaAs/GaAs before and after IR illumination
by: Ju. G. Arapov, et al.
Published: (2015)

Модули солнечных элементов на основе тандемных гетероструктур GaAs-InGaAs-AlGaAs
by: Круковский, С.И., et al.
Published: (2004)

Получение тандемных гетероструктур GaAs—InGaAs—AlGaAs для фотопреобразователей солнечной энергии
by: Николаенко, Ю.Е., et al.
Published: (2002)