Cover Image

Shunt current in InAs diffused photodiodes

Saved in:

Bibliographic Details
Date:	2020
Main Authors:	A. V. Sukach, V. V. Tetyorkin, A. I. Tkachuk
Format:	Article
Language:	English
Published:	2020
Series:	Semiconductor Physics, Quantum Electronics and Optoelectronics
Online Access:	http://jnas.nbuv.gov.ua/article/UJRN-0001151472
Tags:	Add Tag No Tags, Be the first to tag this record!
Journal Title:	Library portal of National Academy of Sciences of Ukraine \| LibNAS

Institution

Library portal of National Academy of Sciences of Ukraine | LibNAS

Similar Items

Shunt current in InAs diffused photodiodes
by: Sukach, A.V., et al.
Published: (2020)

Dark current and 1/f noise in forward-biased InAs photodiodes
by: Tetyorkin, V.V., et al.
Published: (2021)

InAs photodiodes (review)
by: A. V. Sukach, et al.
Published: (2015)

Tunneling current via dislocations in InAs and InSb infrared photodiodes
by: A. V. Sukach, et al.
Published: (2011)

InAs photodiodes (Review. Part IV)
by: A. V. Sukach, et al.
Published: (2018)

InSb Photodiodes (Review, Part I)
by: A. V. Sukach, et al.
Published: (2016)

InSb Photodiodes (Review, Part II)
by: A. V. Sukach, et al.
Published: (2016)

Reverse current-voltage characteristics and carrier transport mechanisms in InAs photodi-odes
by: A. V. Sukach, et al.
Published: (2011)

Peculiarities of manufacture, electrical and photoelectrical properties of diffusion Gep-i-n- photodiodes
by: V. P. Maslov, et al.
Published: (2018)

Trotsenko. InSb photodiodes (Review. Part III)
by: A. V. Sukach, et al.
Published: (2017)

Spectral photosensitivity of diffused Ge-p–i–n photodiods
by: A. V. Fedorenko
Published: (2020)

Influence of alternating current on the current states of a quantum interferometer shunted by superconducting inductance
by: S. I. Link, et al.
Published: (2018)

Electrical properties of InSb p-n junctions prepared by diffusion methods
by: A. V. Sukach, et al.
Published: (2016)

Electrical properties of InSb p-n junctions prepared by diffusion methods
by: Sukach, A.V., et al.
Published: (2016)

Study on the formation of current characteristics of a silicon photodiode with rectifying barriers
by: A. V. Karimov, et al.
Published: (2013)

Carrier transport mechanisms in InSb diffusion p-n junctions
by: A. Sukach, et al.
Published: (2014)

Carrier transport mechanisms in InSb diffusion p-n junctions
by: Sukach, A., et al.
Published: (2014)

InAs фотодіоди (огляд)
by: Сукач, А.В., et al.
Published: (2015)

Heterostructure infrared photodiodes
by: Rogalski, A.
Published: (2000)

Space vector control of shunt active filters
by: V. V. Chopyk, et al.
Published: (2013)

Injection current and infrared photosensitivity in isotype p-PbTe/p-CdTe heterojunctions
by: V. V. Tetyorkin, et al.
Published: (2013)

Effect of surface conductivity on electrical properties of mesa-structure InAs p—n-junctions
by: A. V. Sukach, et al.
Published: (2010)

Optimum Concentration of InSb Photodiode for Minimum Low Reverse Bias Leakage Current
by: Moradi, M., et al.
Published: (2010)

Modulation of the direction of radiation emitted by an InAs/GaAs heterolaser with InAs quantum dots under the influence of acoustic wave
by: R. M. Peleshchak, et al.
Published: (2012)

Modulation of the direction of radiation emitted by an InAs/GaAs heterolaser with InAs quantum dots under the influence of acoustic wave
by: R. M. Peleshchak, et al.
Published: (2012)

Injection current and infrared photosensitivity in isotype p-PbTe/p-CdTe heterojunctions
by: Tetyorkin, V.V., et al.
Published: (2013)

Calculation of volt-ampere characteristic of gapped-core shunt reactor
by: V. F. Ivankov, et al.
Published: (2015)

Subpixel Detection of Spectrum Images by Photodiode Structures
by: Yegorov, A. D., et al.
Published: (2012)

Subpixel Detection of Spectrum Images by Photodiode Structures
by: Yegorov, A., et al.
Published: (2009)

Formation of the compensating current of a three-phase shunt active power filter using multiple-rate sliding modes
by: T. V. Mysak, et al.
Published: (2020)

Chemical polishing of InAs, InSb, GaAs and GaSb
by: Levchenko, I.V., et al.
Published: (2017)

Nuclear irradiation-induced superconductivity in the binary semiconductor InAs
by: Kаrpenko, А.Ya., et al.
Published: (2003)

Simulation of strain fields in GaSb/InAs heteroepitaxial system
by: Shutov, S.V., et al.
Published: (2006)

Development of a detection block of a combined mode scintillator-photodiode system (counting-current) for azimuthal detecting complexes
by: Nekrasov, V.V., et al.
Published: (2004)

Current-voltage characteristics of the injection photodiode based on M(In)-nCdS-pSi-M(In) structure
by: I. B. Sapaev, et al.
Published: (2019)

Thermostabilized photodiode for monitoring radiation of medical lasers
by: Dobrovolsky, Yu., et al.
Published: (2015)

Thermostabilized photodiode for monitoring radiation of medical lasers
by: Yu. Dobrovolsky, et al.
Published: (2015)

Capacitance spectroscopy of InAs self-assembled quantum dots
by: Martin, P.M., et al.
Published: (1998)

COAXIAL DISK SHUNT FOR MEASURING IN THE HEAVY-CURRENT CHAIN OF HIGH-VOLTAGE GENERATOR OF STORM DISCHARGES OF IMPULSES OF CURRENT OF ARTIFICIAL LIGHTNING WITH THE INTEGRAL OF ACTION TO 15•106 J/OHM
by: Baranov, M. I., et al.
Published: (2017)

Miniband electrical conductivity in superlattices of spherical InAs/GaAs quantum dots
by: V. I. Boichuk, et al.
Published: (2017)