The effect of the barrier width between coupled double quantum wells of GaAs/InGaAs/GaAs on the bipolar transport and THz emission of the hot carriers in the lateral electric field
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| Date: | 2020 |
|---|---|
| Main Authors: | M. N. Vinoslavskij, P. A. Beljovskij, V. N. Poroshin, V. V. Vajnberg, N. V. Bajdus |
| Format: | Article |
| Language: | English |
| Published: |
2020
|
| Series: | Low Temperature Physics |
| Online Access: | http://jnas.nbuv.gov.ua/article/UJRN-0001151503 |
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| Journal Title: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
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