Influence of gettering on aluminum ohmic contact formation
Saved in:
| Date: | 2020 |
|---|---|
| Main Authors: | V. N. Litvinenko, Ye. A. Baganov, I. M. Vikulin, V. E. Gorbachev |
| Format: | Article |
| Language: | English |
| Published: |
2020
|
| Series: | Technology and design in electronic equipment |
| Online Access: | http://jnas.nbuv.gov.ua/article/UJRN-0001194825 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Institution
Library portal of National Academy of Sciences of Ukraine | LibNASSimilar Items
Improvement of the reverse characteristics of Schottky diodes using gettering
by: V. N. Litvinenko, et al.
Published: (2019)
by: V. N. Litvinenko, et al.
Published: (2019)
Improvement of the reverse characteristics of Schottky diodes using gettering
by: Litvinenko, V.N., et al.
Published: (2019)
by: Litvinenko, V.N., et al.
Published: (2019)
Formation of ohmic contacts to n(p)-gan and measurement of their contact resistivity
by: Boltovets, M.S., et al.
Published: (2010)
by: Boltovets, M.S., et al.
Published: (2010)
Formation of ohmic contacts to n(p)-gan and measurement of their contact resistivity
by: M. S. Boltovets, et al.
Published: (2010)
by: M. S. Boltovets, et al.
Published: (2010)
Mechanisms of contact resistance formation in ohmic contacts with high dislocation density (review)
by: A. V. Sachenko, et al.
Published: (2013)
by: A. V. Sachenko, et al.
Published: (2013)
Features of the formation of ohmic contacts to n+-InN
by: P. O. Sai, et al.
Published: (2019)
by: P. O. Sai, et al.
Published: (2019)
Features of the formation of ohmic contacts to n+-InN
by: P. O. Sai, et al.
Published: (2019)
by: P. O. Sai, et al.
Published: (2019)
Enhancing parameters of silicon varactors using laser gettering
by: I. M. Vikulin, et al.
Published: (2018)
by: I. M. Vikulin, et al.
Published: (2018)
Physical mechanisms providing formation of ohmic contacts, metal-semiconductor (Review)
by: Sachenko, A.V., et al.
Published: (2018)
by: Sachenko, A.V., et al.
Published: (2018)
Physical mechanisms providing formation of ohmic contacts metal-semiconductor (Review)
by: A. V. Sachenko, et al.
Published: (2018)
by: A. V. Sachenko, et al.
Published: (2018)
Role of dislocations in formation of ohmic contacts to heavily doped n-Si
by: A. E. Belyaev, et al.
Published: (2013)
by: A. E. Belyaev, et al.
Published: (2013)
Role of dislocations in formation of ohmic contacts to heavily doped n-Si
by: Belyaev, A.E., et al.
Published: (2013)
by: Belyaev, A.E., et al.
Published: (2013)
Improving parameters of planar pulse diode using gettering
by: V. M. Lytvynenko, et al.
Published: (2021)
by: V. M. Lytvynenko, et al.
Published: (2021)
Method for data processing in application to ohmic contacts
by: A. E. Belyaev, et al.
Published: (2019)
by: A. E. Belyaev, et al.
Published: (2019)
Method for data processing in application to ohmic contacts
by: Belyaev, A.E., et al.
Published: (2019)
by: Belyaev, A.E., et al.
Published: (2019)
Вплив гетерування на процес формування алюмінієвого омічного контакту
by: Litvinenko, Victor, et al.
Published: (2020)
by: Litvinenko, Victor, et al.
Published: (2020)
Покращення параметрів планарного імпульсного діода при використанні гетерування
by: Litvinenko, Viktor, et al.
Published: (2021)
by: Litvinenko, Viktor, et al.
Published: (2021)
Ohmic contacts to InN-based materials
by: Sai, P.O.
Published: (2016)
by: Sai, P.O.
Published: (2016)
Ohmic contacts to InN-based materials
by: P. O. Sai
Published: (2016)
by: P. O. Sai
Published: (2016)
Ohmic contacts based on Pd to indium phosphide Gunn diodes
by: A. E. Belyaev, et al.
Published: (2015)
by: A. E. Belyaev, et al.
Published: (2015)
Metrological aspects of studying the specific contact resistivity of ohmic contacts by using the four-contact method
by: V. N. Sheremet
Published: (2014)
by: V. N. Sheremet
Published: (2014)
Metrological aspects of researching the specific contact resistivity of ohmic contacts by using the four-contact method
by: Sheremet, V.N.
Published: (2014)
by: Sheremet, V.N.
Published: (2014)
Ohmic contacts based on Pd to indium phosphide Gunn diodes
by: Belyaev, A.E., et al.
Published: (2015)
by: Belyaev, A.E., et al.
Published: (2015)
Heterostructure ohmic contacts to p-CdTe polycrystalline films
by: Sukach, A.V., et al.
Published: (2014)
by: Sukach, A.V., et al.
Published: (2014)
Heterostructure ohmic contacts to p-CdTe polycrystalline films
by: A. V. Sukach, et al.
Published: (2014)
by: A. V. Sukach, et al.
Published: (2014)
Influence of parameters inherent to ohmic contacts on properties of microwave avalanche transit-time diodes
by: Ya. Ya. Kudryk, et al.
Published: (2019)
by: Ya. Ya. Kudryk, et al.
Published: (2019)
Influence of parameters inherent to ohmic contacts on properties of microwave avalanche transit-time diodes
by: Kudryk, Ya.Ya., et al.
Published: (2019)
by: Kudryk, Ya.Ya., et al.
Published: (2019)
Heat-resistant ohmic and barrier contacts for GaAs-based microwave devices
by: Ivanov, V.N., et al.
Published: (2003)
by: Ivanov, V.N., et al.
Published: (2003)
Temperature dependence of contact resistance of Au−Ti−Pd2Si−n⁺ -Si ohmic contacts
by: Belyaev, A.E., et al.
Published: (2010)
by: Belyaev, A.E., et al.
Published: (2010)
Temperature dependence of contact resistance of Au Ti Pd2Si n+-Si ohmic contacts
by: A. E. Belyaev, et al.
Published: (2010)
by: A. E. Belyaev, et al.
Published: (2010)
Influence of plasma treatment on erosion haracteristics and structure of reversible hydrogen getters
by: Borisko, V.N., et al.
Published: (2000)
by: Borisko, V.N., et al.
Published: (2000)
The features of temperature dependence of contact resistivity of Au-Ti-Pd₂Si-p⁺ ₋Si ohmic contacts
by: Belyaev, A.E., et al.
Published: (2010)
by: Belyaev, A.E., et al.
Published: (2010)
Investigation of contact resistivity for Au—Ti—Pd—n-Si ohmic contacts for impatt diodes
by: V. V. Basanets, et al.
Published: (2015)
by: V. V. Basanets, et al.
Published: (2015)
Characteristics of gettering process in multicrystalline Si wafers with combined porous Si/Al getters
by: A. Sarikov, et al.
Published: (2012)
by: A. Sarikov, et al.
Published: (2012)
Structure and physical characteristics of ohmic contacts based on Fe and Ge films
by: Vlasenko, О.V., et al.
Published: (2014)
by: Vlasenko, О.V., et al.
Published: (2014)
Methods for creation and properties of ohmic contacts to indium phosphide (rewiev)
by: Ya. Ya. Kudryk
Published: (2015)
by: Ya. Ya. Kudryk
Published: (2015)
On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n+-n doping step
by: A. V. Sachenko, et al.
Published: (2014)
by: A. V. Sachenko, et al.
Published: (2014)
On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n⁺ -n doping step
by: Sachenko, A.V., et al.
Published: (2014)
by: Sachenko, A.V., et al.
Published: (2014)
The features of temperature dependence of contact resistivity of Au Ti Pd2Si p+-Si ohmic contacts
by: A. E. Belyaev, et al.
Published: (2010)
by: A. E. Belyaev, et al.
Published: (2010)
Effect of microwave treatment on current flow mechanism in ohmic contacts to GaN
by: Sheremet, V.N.
Published: (2013)
by: Sheremet, V.N.
Published: (2013)
Similar Items
-
Improvement of the reverse characteristics of Schottky diodes using gettering
by: V. N. Litvinenko, et al.
Published: (2019) -
Improvement of the reverse characteristics of Schottky diodes using gettering
by: Litvinenko, V.N., et al.
Published: (2019) -
Formation of ohmic contacts to n(p)-gan and measurement of their contact resistivity
by: Boltovets, M.S., et al.
Published: (2010) -
Formation of ohmic contacts to n(p)-gan and measurement of their contact resistivity
by: M. S. Boltovets, et al.
Published: (2010) -
Mechanisms of contact resistance formation in ohmic contacts with high dislocation density (review)
by: A. V. Sachenko, et al.
Published: (2013)