Cover Image

High-resistivity p-type silicon-based p-i-n photodiode with high responsivity at the wavelength of 1060 nm

Saved in:

Bibliographic Details
Date:	2020
Main Authors:	M. S. Kukurudziak, O. P. Andreeva, V. M. Lipka
Format:	Article
Language:	English
Published:	2020
Series:	Technology and design in electronic equipment
Online Access:	http://jnas.nbuv.gov.ua/article/UJRN-0001194859
Tags:	Add Tag No Tags, Be the first to tag this record!
Journal Title:	Library portal of National Academy of Sciences of Ukraine \| LibNAS

Institution

Library portal of National Academy of Sciences of Ukraine | LibNAS

Similar Items

Photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm
by: Dobrovolskyi, Yu., et al.
Published: (2014)

Photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm
by: Yu. Dobrovolskyi, et al.
Published: (2014)

Method of &quot;cleaning” the surface of responsive elements of silicon p-i-n photodiodes from dislocations
by: M. S. Kukurudziak
Published: (2023)

Р–i–n-фотодіод на основі високоомного кремнію p-типу з підвищеною чутливістю на довжині хвилі 1060 нм
by: Kukurudziak , Mykola, et al.
Published: (2020)

Silicon p-i-n photodiode with increased pulse sensitivity
by: M. S. Kukurudziak, et al.
Published: (2021)

Problems of chemical-dynamic polishing in the technology of silicon p-i-n photodiodes
by: M. S. Kukurudziak
Published: (2023)

Spectral photosensitivity of diffused Ge-p–i–n photodiods
by: A. V. Fedorenko
Published: (2020)

Precise measurements of the wavelength in KrCl laser spectral region (222 nm)
by: N. G. Zubrilin, et al.
Published: (2016)

Precise measurements of the wavelength in KrCl laser spectral region (222 nm)
by: Zubrilin, N.G., et al.
Published: (2016)

Multilayer periodic compositions of ZrC/Mg for a wavelength of 30.4 nm
by: L. E. Konotopskij, et al.
Published: (2015)

p, T, E-diagram of Sn₂P₂S₆ ferroelectric with high-pressure incommensurate phase
by: Kedyulich, V.M., et al.
Published: (2000)

Study on the formation of current characteristics of a silicon photodiode with rectifying barriers
by: A. V. Karimov, et al.
Published: (2013)

Strain induced effects in p-type silicon whiskers at low temperatures
by: Druzhinin, A.A., et al.
Published: (2012)

Проблеми хіміко-динамічного полірування в технології кремнієвих p-i-n фотодіодів
by: Kukurudziak, M. S.
Published: (2023)

Laser-induced incandescence of silicon surface under 1064-nm excitation
by: Kopyshinsky, A.V., et al.
Published: (2012)

Laser-induced incandescence of silicon surface under 1064-nm excitation
by: A. V. Kopyshinsky, et al.
Published: (2012)

The prospects of use of silicon photodiodes for registration alpha, beta radiation and neutrons
by: Voronkin, E.F., et al.
Published: (2016)

Метод «очищення» поверхні фоточутливих елементів кремнієвих p-i-n фотодіодів від дислокацій
by: Kukurudziak, M. S.
Published: (2023)

Silicon photodiode and preamplifier operation characteristic properties under background radiation conditions
by: Hodovaniouk, V.M., et al.
Published: (2005)

Technique and setup for diagnostics of p-n junction to case thermal resistance in high-power gallium nitride LEDs
by: V. M. Sorokin, et al.
Published: (2012)

Technique and setup for diagnostics of p-n junction to case thermal resistance in high-power gallium nitride LEDs
by: Sorokin, V.M., et al.
Published: (2012)

Investigation High Sensitive Photo Detector Device Based on the Avalanche Photodiode for Optoelectronic Measuring Systems
by: I. A. Braginets, et al.
Published: (2016)

New phoswich detector based on LFS and p-terphenyl scintillators coupled to micro pixel avalanche photodiode
by: Ahmadov, F., et al.
Published: (2017)

Optimization of technology for fabrication of sectional nuclear radiation detectors based on high-resistance silicon
by: Gaidar, G.P., et al.
Published: (2017)

Phase transitions in Sn₂P₂S₆ ferroelectric under high pressures
by: Slivka, A.G., et al.
Published: (1999)

Combined detectors of charged particles based on zinc selenide scintillators and silicon photodiodes
by: Ryzhikov, V.D., et al.
Published: (2001)

Structural and mechano_chemical features of high_pressure phases forming at p, T and p-treatment of graphite
by: A. V. Lysenko
Published: (2014)

Structural and mechano_chemical features of high_pressure phases forming at p, T and p-treatment of graphite
by: A. V. Lysenko
Published: (2014)

Current-voltage characteristics of the injection photodiode based on M(In)-nCdS-pSi-M(In) structure
by: I. B. Sapaev, et al.
Published: (2019)

Investigation of the modulation processes of the base area of the silicon p+p-n+-structure
by: D. M. Jodgorova, et al.
Published: (2013)

Кремнієвий p–i–n-фотодіод із підвищеною імпульсною чутливістю
by: Kukurudziak, Mykola, et al.
Published: (2021)

Gas and dust in Comet 2P/Encke observed in the visual and submillimeter wavelength ranges
by: Jockers, K., et al.
Published: (2005)

Approaching to an optimal value of rise time in n-well/p substrate photodiode by controlling depletion layer width
by: Emad Hameed Hussein
Published: (2009)

InAs photodiodes (review)
by: A. V. Sukach, et al.
Published: (2015)

Obtaining of bilateral high voltage epitaxial p—i—n Si structures by LPE method
by: N. M. Vakiv, et al.
Published: (2013)

Voids’ layer structures in silicon irradiated with high doses of high-energy helium ions
by: Starchyk, M.I., et al.
Published: (2015)

InSb Photodiodes (Review, Part I)
by: A. V. Sukach, et al.
Published: (2016)

Formation and thermal stability of NiSi phase in Ni (30 nm)/Pt (2 nm; 6 nm)/Siep. (50 nm)/Si (001) thin film systems
by: Makogon, Iu.N., et al.
Published: (2013)

Evolution of a dislocation structure during the growth silicon single crystals of n– and p–type
by: Azarenkov, N.A., et al.
Published: (2020)

Center-to-limb variation of the Mn I 539.5 nm and the Mn I 543.2 nm line profiles
by: Vince, I., et al.
Published: (2003)