Growing of heteroepitaxial layers on lattice mismatched substrates by the method of scanning liquid phase epitaxy
Saved in:
| Date: | 2020 |
|---|---|
| Main Authors: | V. V. Tsybulenko, S. V. Shutov |
| Format: | Article |
| Language: | English |
| Published: |
2020
|
| Series: | Technology and design in electronic equipment |
| Online Access: | http://jnas.nbuv.gov.ua/article/UJRN-0001194862 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Institution
Library portal of National Academy of Sciences of Ukraine | LibNASSimilar Items
-
Thick layers liquid-phase epitaxy method
by: S. N. Dranchuk, et al.
Published: (2013) -
Elastic strains influence during GaSb/InAs heteroepitaxy from liquid phase
by: Shutov, S.V., et al.
Published: (2006) -
Simulation of growth of graded bandgap GaAsP layers at liquid phase electroepitaxy
by: Tsybulenko, V., et al.
Published: (2008) -
Lowering the density of dislocations in heteroepitaxial III-nitride layers: Effect of sapphire substrate treatment (review)
by: P. V. Parphenyuk, et al.
Published: (2016) -
Lowering the density of dislocations in heteroepitaxial III-nitride layers: Effect of sapphire substrate treatment (review)
by: Parphenyuk, P.V., et al.
Published: (2016)