Cover Image

Improvement of the reverse characteristics of Schottky diodes using gettering

Saved in:

Bibliographic Details
Date:	2019
Main Authors:	V. N. Litvinenko, I. M. Vikulin, V. E. Gorbachev
Format:	Article
Language:	English
Published:	2019
Series:	Technology and design in electronic equipment
Online Access:	http://jnas.nbuv.gov.ua/article/UJRN-0000994766
Tags:	Add Tag No Tags, Be the first to tag this record!
Journal Title:	Library portal of National Academy of Sciences of Ukraine \| LibNAS

Institution

Library portal of National Academy of Sciences of Ukraine | LibNAS

Similar Items

Improvement of the reverse characteristics of Schottky diodes using gettering
by: Litvinenko, V.N., et al.
Published: (2019)

Improving parameters of planar pulse diode using gettering
by: V. M. Lytvynenko, et al.
Published: (2021)

Influence of gettering on aluminum ohmic contact formation
by: V. N. Litvinenko, et al.
Published: (2020)

Conduction mechanisms of the reverse leakage current of β-Ga₂O₃ Schottky barrier diodes
by: Latreche, A.
Published: (2019)

Simulation of combined Schottky diode
by: Ye. M. Kiselov
Published: (2013)

Simulation of combined schottky diode
by: Кісельов, Єгор Миколайович
Published: (2015)

Simulation of combined schottky diode
by: Кісельов, Єгор Миколайович
Published: (2015)

Enhancing parameters of silicon varactors using laser gettering
by: I. M. Vikulin, et al.
Published: (2018)

Conduction mechanisms of the reverse leakage current of β-Ga2O3 Schottky barrier diodes
by: A. Latreche
Published: (2019)

Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor
by: S. I. Vlasov, et al.
Published: (2010)

Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor
by: Vlasov, S.I., et al.
Published: (2010)

Influence of plasma treatment on erosion haracteristics and structure of reversible hydrogen getters
by: Borisko, V.N., et al.
Published: (2000)

Nonlinear Analysis of Millimeter-Wave Schottky Diode Mixers
by: Piddyachiy, V. I., et al.
Published: (2013)

Characteristics of gettering process in multicrystalline Si wafers with combined porous Si/Al getters
by: A. Sarikov, et al.
Published: (2012)

Formation of ickel-platinum silicide layer as a barrier Schottky diodes
by: P. V. Kuchinskij, et al.
Published: (2014)

Schottky Diode Tripler in the 3-mm Wave Receiver for Investigation of Atmospheric Gases
by: V. I. Podjachij
Published: (2015)

SCHOTTKY DIODE TRIPLER IN THE 3-MM WAVE RECEIVER FOR INVESTIGATION OF ATMOSPHERIC GASES
by: Piddyachiy, V. I.
Published: (2015)

Effect of technology parameters on the quality of nZnSe(X)/Ni Schottky diodes
by: Katrunov, K.A., et al.
Published: (2008)

Active region of CdTe X-/γ-ray detector with Schottky diode
by: Kosyachenko, L.A., et al.
Published: (2005)

SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers
by: Boltovets, N.S., et al.
Published: (2004)

Calculating the electronic transmission properties of semiconducting carbon nanotube Schottky diodes with increase in diameter
by: R. Nizam, et al.
Published: (2012)

Radiation-resistant photostructure for Schottky diode based on Cr/In2Hg3Te6
by: A. A. Ashcheulov, et al.
Published: (2016)

On the current flow mechanism in the Au-TiBx-n-GaN-i-Al₂O₃ Schottky barrier diodes
by: Belyaev, A.E., et al.
Published: (2007)

Investigation of the intermediate layers of a diode with a Schottky barrier Al-pCdTe-Mo
by: Sh. A. Mirsagatov, et al.
Published: (2012)

Поліпшення зворотних характеристик діода Шотткі при використанні гетерування
by: Litvinenko, V., et al.
Published: (2019)

Determination of the Schottky barrier height in diodes based on Au-TiB2-n-SiC 6H from the current-voltage and capacitance-voltage characteristics
by: Ya. Ya. Kudryk, et al.
Published: (2014)

Investigations of impurity gettering in multicrystalline silicon
by: Evtukh, A.A., et al.
Published: (2001)

Combination of thermionic emission and tunneling mechanisms to analyze the leakage current in 4H-SiC Schottky barrier diodes
by: A. Latreche
Published: (2019)

Combination of thermionic emission and tunneling mechanisms to analyze the leakage current for 4H-SiC Schottky barrier diodes
by: Latreche, A.
Published: (2019)

The formation of isolating and gettering layers in semiconductors with use of medium energy proton implantation
by: F. F. Komarov, et al.
Published: (2008)

Hydrogen gettering in annealed oxygen-implanted silicon
by: A. Misiuk, et al.
Published: (2010)

Schottky contact degradation at thermal annealing
by: E. F. Venger, et al.
Published: (2012)

Lateral photo-emf in Schottky contact
by: E. F. Venger, et al.
Published: (2010)

On features of deoxidization of CsI melt with zirconium getter
by: Datsko, Yu.N., et al.
Published: (2016)

Influence of 2 MeV electrons irradiation on gallium phosphide light-emitting diodes reverse currents
by: V. H. Vorobiov, et al.
Published: (2015)

Вплив гетерування на процес формування алюмінієвого омічного контакту
by: Litvinenko, Victor, et al.
Published: (2020)

Methods and mechanisms of gettering of silicon structures in the production of integrated circuits
by: V. A. Pilipenko, et al.
Published: (2013)

Покращення параметрів планарного імпульсного діода при використанні гетерування
by: Litvinenko, Viktor, et al.
Published: (2021)

Operational characteristics of the electron accelerator based on the plasma-filled diode
by: Skibenko, E.I., et al.
Published: (2021)

Increase of planar homogeneity of multi-silicon structures by gettering treatments
by: Litovchenko, V.G., et al.
Published: (2001)