Method for data processing in application to ohmic contacts

Method for data processing in application to ohmic contacts

Saved in:

Bibliographic Details
Date:	2019
Main Authors:	A. E. Belyaev, N. S. Boltovets, R. V. Konakova, V. M. Kovtonjuk, Ya. Ya. Kudryk, V. V. Shynkarenko, M. M. Dub, P. O. Saj, S. V. Novitskii
Format:	Article
Language:	English
Published:	2019
Series:	Semiconductor Physics, Quantum Electronics and Optoelectronics
Online Access:	http://jnas.nbuv.gov.ua/article/UJRN-0001000430
Tags:	Add Tag No Tags, Be the first to tag this record!
Journal Title:	Library portal of National Academy of Sciences of Ukraine \| LibNAS

Institution

Library portal of National Academy of Sciences of Ukraine | LibNAS

Similar Items

Formation of ohmic contacts to n(p)-gan and measurement of their contact resistivity
by: M. S. Boltovets, et al.
Published: (2010)

Formation of ohmic contacts to n(p)-gan and measurement of their contact resistivity
by: Boltovets, M.S., et al.
Published: (2010)

Temperature dependence of contact resistance of Au Ti Pd2Si n+-Si ohmic contacts
by: A. E. Belyaev, et al.
Published: (2010)

Temperature dependence of contact resistance of Au−Ti−Pd2Si−n⁺ -Si ohmic contacts
by: Belyaev, A.E., et al.
Published: (2010)

Methods for creation and properties of ohmic contacts to indium phosphide (rewiev)
by: Ya. Ya. Kudryk
Published: (2015)

Ohmic contacts based on Pd to indium phosphide Gunn diodes
by: A. E. Belyaev, et al.
Published: (2015)

Ohmic contacts based on Pd to indium phosphide Gunn diodes
by: Belyaev, A.E., et al.
Published: (2015)

Role of dislocations in formation of ohmic contacts to heavily doped n-Si
by: Belyaev, A.E., et al.
Published: (2013)

Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures
by: Boltovets, N.S., et al.
Published: (2006)

The features of temperature dependence of contact resistivity of Au-Ti-Pd₂Si-p⁺ ₋Si ohmic contacts
by: Belyaev, A.E., et al.
Published: (2010)

Physical mechanisms providing formation of ohmic contacts metal-semiconductor (Review)
by: A. V. Sachenko, et al.
Published: (2018)

The features of temperature dependence of contact resistivity of Au Ti Pd2Si p+-Si ohmic contacts
by: A. E. Belyaev, et al.
Published: (2010)

Mechanisms of contact resistance formation in ohmic contacts with high dislocation density (review)
by: A. V. Sachenko, et al.
Published: (2013)

Heat-resistant barrier and ohmic contacts based on TiBx and ZrBx interstitial phases to microwave diode structures
by: Belyaev, A.E., et al.
Published: (2008)

On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n+-n doping step
by: A. V. Sachenko, et al.
Published: (2014)

Role of dislocations in formation of ohmic contacts to heavily doped n-Si
by: A. E. Belyaev, et al.
Published: (2013)

On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n⁺ -n doping step
by: Sachenko, A.V., et al.
Published: (2014)

Structural and electrical-physical properties of the ohmic contacts based on palladium to n+-n-n++-n+++-InP
by: A. E. Belyaev, et al.
Published: (2015)

Theoretical and experimental modelling the specific resistance of vertical ohmic contacts Au–Ti–Pd–n⁺-n-n⁺-Si in IMPATT diodes
by: Romanets, P.M., et al.
Published: (2016)

Influence of parameters inherent to ohmic contacts on properties of microwave avalanche transit-time diodes
by: Ya. Ya. Kudryk, et al.
Published: (2019)

Structural and electrical-physical properties of the ohmic contacts based on palladium to n⁺ -n-n⁺⁺ -n⁺⁺⁺ -InP
by: Belyaev, A.E., et al.
Published: (2015)

Features of the formation of ohmic contacts to n+-InN
by: P. O. Sai, et al.
Published: (2019)

Features of the formation of ohmic contacts to n+-InN
by: P. O. Sai, et al.
Published: (2019)

Effect of microwave radiation on I V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN
by: A. E. Belyaev, et al.
Published: (2013)

Effect of microwave radiation on I-V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN
by: Belyaev, A.E., et al.
Published: (2013)

Heat-resistant ohmic and barrier contacts for GaAs-based microwave devices
by: Ivanov, V.N., et al.
Published: (2003)

Theoretical and experimental modelling the specific resistance of vertical ohmic contacts Au–Ti–Pd–n+-n-n+-Si in IMPATT diodes
by: P. M. Romanets, et al.
Published: (2016)

Metrological aspects of studying the specific contact resistivity of ohmic contacts by using the four-contact method
by: V. N. Sheremet
Published: (2014)

Metrological aspects of researching the specific contact resistivity of ohmic contacts by using the four-contact method
by: Sheremet, V.N.
Published: (2014)

Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n+-GaN ohmic contacts
by: A. V. Sachenko, et al.
Published: (2013)

Optimization of technological parameters of ohmic contact junctions for GaAs-AlGaAs-based transistor structures
by: Konakova, R.V., et al.
Published: (2002)

Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n⁺ -GaN ohmic contacts
by: Sachenko, A.V., et al.
Published: (2013)

Influence of gettering on aluminum ohmic contact formation
by: V. N. Litvinenko, et al.
Published: (2020)

New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis
by: Arsentyev, I.N., et al.
Published: (2005)

Current transport through ohmic contacts to indiume nitride with high defect density
by: Sai, P.O., et al.
Published: (2018)

Ohmic contacts to InN-based materials
by: P. O. Sai
Published: (2016)

Ohmic contacts to InN-based materials
by: Sai, P.O.
Published: (2016)

Heterostructure ohmic contacts to p-CdTe polycrystalline films
by: A. V. Sukach, et al.
Published: (2014)

Heterostructure ohmic contacts to p-CdTe polycrystalline films
by: Sukach, A.V., et al.
Published: (2014)

Investigation of contact resistivity for Au—Ti—Pd—n-Si ohmic contacts for impatt diodes
by: V. V. Basanets, et al.
Published: (2015)