Cover Image

The effect of ion implantation on structural damage in compositionally graded AlGaN layers

Saved in:

Bibliographic Details
Date:	2019
Main Authors:	O. I. Liubchenko, V. P. Kladko, H. V. Stanchu, T. M. Sabov, V. P. Melnik, S. B. Kryvyi, A. E. Belyaev
Format:	Article
Language:	English
Published:	2019
Series:	Semiconductor Physics, Quantum Electronics and Optoelectronics
Online Access:	http://jnas.nbuv.gov.ua/article/UJRN-0001000445
Tags:	Add Tag No Tags, Be the first to tag this record!
Journal Title:	Library portal of National Academy of Sciences of Ukraine \| LibNAS

Institution

Library portal of National Academy of Sciences of Ukraine | LibNAS

Similar Items

The effect of ion implantation on structural damage in compositionally graded AlGaN layers
by: Liubchenko, O.I., et al.
Published: (2019)

Investigation of traps in AlGaN/GaN heterostructures by ultrasonic vibrations
by: V. V. Kaliuzhnyi, et al.
Published: (2021)

Investigation of traps in AlGaN/GaN heterostructures by ultrasonic vibrations
by: V. V. Kaliuzhnyi, et al.
Published: (2021)

Significance of DX-centers for acoustic induced reconstruction processes of defects in GaN/AlGaN
by: Ya. M. Olikh, et al.
Published: (2021)

Deformation state of short-period AlGaN/GaN superlattices at different well-barrier thickness ratios
by: V. P. Kladko, et al.
Published: (2014)

Deformation state of short-period AlGaN/GaN superlattices at different well-barrier thickness ratios
by: Kladko, V.P., et al.
Published: (2014)

Modeling of X-ray rocking curves for layers after two-stage ion-implantation
by: O. I. Liubchenko, et al.
Published: (2017)

Modeling of X-ray rocking curves for layers after two-stage ion-implantation
by: Liubchenko, O.I., et al.
Published: (2017)

Self-heating effects in AlGaN/GaN HEMT heterostructures: Electrical and optical characterization
by: A. V. Naumov, et al.
Published: (2015)

Self-heating effects in AlGaN/GaN HEMT heterostructures: Electrical and optical characterization
by: Naumov, A.V., et al.
Published: (2015)

Sub-THz nonresonant detection in AlGaN/GaN heterojunction FETs
by: A. G. Golenkov, et al.
Published: (2015)

The composition effect on the bowing parameter in the cubic InGaN, AlGaN and AlInN alloys
by: Berrah, S., et al.
Published: (2008)

AlGaInAs graded-dap Gunn diode
by: I. P. Storozhenko, et al.
Published: (2016)

Impact of proton irradiation on AlGaN/GaN transistors with high electron mobility
by: M. Bataev, et al.
Published: (2011)

X-ray diffraction investigation of GaN layers on Si(111) and Al2O3(0001) substrates
by: N. V. Safriuk, et al.
Published: (2013)

Влияние протонного облучения на AlGaN/GaN транзисторы c высокой подвижностью электронов
by: Батаев, М., et al.
Published: (2011)

Investigation of electric and magnetic characteristics of high-temperature hall sensor based on AlGaN/GaN heterostructure
by: V. R. Stempitskij, et al.
Published: (2017)

Modelling and diagnostics of damages and strains in a crystal of Gd3Ga5O12 after implantation of F ions
by: V. O. Kotsiubynskyi, et al.
Published: (2014)

Дослідження електричних та магнітних характеристик високотемпературних датчиків Холла на основі гетероструктури AlGaN/GaN
by: Stempitsky, V. R., et al.
Published: (2017)

AES and XPS characterization of TiN layers formed and modified by ion implantation
by: Melnik, V., et al.
Published: (1999)

Influence of ion implantation and annealing on composition and structure of GaAs surface
by: Normuradov, M.T., et al.
Published: (2002)

Исследование электрических и магнитных характеристик высокотемпературных датчиков Холла на основе гетеро-структуры AlGaN/GaN
by: Стемпицкий, В.Р., et al.
Published: (2017)

Ion implantation, ion-beam mixing during simultaneous ion implantation and metal deposition
by: M. A. Lisovenko, et al.
Published: (2013)

Ion implantation, ion-beam mixing during simultaneous ion implantation and metal deposition
by: Lisovenko, M.A., et al.
Published: (2013)

Investigation of photodiode formation processes in insb by using beryllium ion implantation
by: Yu. V. Holtvianskyi, et al.
Published: (2017)

Ultrasound effect on radiation damages in boron implanted silicon
by: Romanjuk, B., et al.
Published: (2000)

Simulation of growth of graded bandgap GaAsP layers at liquid phase electroepitaxy
by: Tsybulenko, V., et al.
Published: (2008)

Properties of steel modified by surface ion implantation with Mo, Ti, and Al
by: S. O. Kryvoruchko, et al.
Published: (2022)

Properties of steel modified by surface ion implantation with Mo, Ti, and Al
by: S. O. Kryvoruchko, et al.
Published: (2022)

Interaction of sub-terahertz radiation with low-doped grating-based AlGaN/GaN plasmonic structures. Time-domain spectroscopy measurements and electrodynamic modeling
by: V. V. Korotyeyev, et al.
Published: (2019)

Interaction of sub-terahertz radiation with low-doped grating-based AlGaN/GaN plasmonic structures. Time-domain spectroscopy measurements and electrodynamic modeling
by: Korotyeyev, V.V., et al.
Published: (2019)

Research of recombination characteristics of Cz-Si implanted with iron ions
by: D. V. Gamov, et al.
Published: (2013)

Be-ion implanted p-n InSb diode for infrared applications. Modeling, fabrication and characterization
by: V. V. Korotyeyev, et al.
Published: (2018)

Be-ion-implanted p-n InSb diode for infrared applications. Modeling, fabrication, and characterization
by: Korotyeyev, V.V., et al.
Published: (2018)

Research of recombination characteristics of Cz-Si implanted with iron ions
by: D. V. Hamov, et al.
Published: (2013)

Influence of helium ion implantation on the form of an elementary cell in near-surface layers of single crystals
by: I. P. Yaremii, et al.
Published: (2013)

High-resistance low-doped GaAs and AlGaAs layers obtained by LPE
by: Krukovsky, S.I., et al.
Published: (2003)

Activation of porous Si blue emission due to preanodization ion implantation
by: Rozhin, A.G., et al.
Published: (2001)

Formation of structural heterogeneity of the near-surface layer of films of iron-yttrium granatos by implantation of Si+ ions
by: B. K. Ostafiichuk, et al.
Published: (2011)

Distribution of chemical elements in the surface layer of the films implanted ions SI+ with yttrium iron garnet
by: V. M. Pylypiv, et al.
Published: (2014)