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Electron and hole effective masses in heavily boron doped silicon nanostructures determined using cyclotron resonance experiments

Electron and hole effective masses in heavily boron doped silicon nanostructures determined using cyclotron resonance experiments

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Bibliographic Details
Main Authors: D. V. Savchenko, E. N. Kalabukhova, B. D. Shanina, N. T. Bagraev, L. E. Klyachkin, A. M. Malyarenko, V. S. Khromov
Format: Article
Language:English
Published: 2018
Series:Semiconductor Physics, Quantum Electronics and Optoelectronics
Online Access:http://jnas.nbuv.gov.ua/article/UJRN-0000923036
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Internet

http://jnas.nbuv.gov.ua/article/UJRN-0000923036

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