Electron and hole effective masses in heavily boron doped silicon nanostructures determined using cyclotron resonance experiments
Saved in:
| Date: | 2018 |
|---|---|
| Main Authors: | D. V. Savchenko, E. N. Kalabukhova, B. D. Shanina, N. T. Bagraev, L. E. Klyachkin, A. M. Malyarenko, V. S. Khromov |
| Format: | Article |
| Language: | English |
| Published: |
2018
|
| Series: | Semiconductor Physics, Quantum Electronics and Optoelectronics |
| Online Access: | http://jnas.nbuv.gov.ua/article/UJRN-0000923036 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Institution
Library portal of National Academy of Sciences of Ukraine | LibNASSimilar Items
-
Features of piezoresistance in heavily doped n-silicon crystals
by: G. P. Gaidar
Published: (2013) -
Features of piezoresistance in heavily doped n-silicon crystals
by: Gaidar, G.P.
Published: (2013) -
Low temperature thermal conductivity of heavily boron-doped synthetic diamond: Influence of boron-related structure defects
by: D. Prikhodko, et al.
Published: (2019) -
Low temperature thermal conductivity of heavily boron-doped synthetic diamond: Influence of boron-related structure defects
by: Prikhodko, D., et al.
Published: (2019) -
Negative magnetoresistance of heavily doped silicon p-n junction
by: V. L. Borblik, et al.
Published: (2011)