Influence of intrinsic point defects and substitutional impurities (Cl, I-S) on the electronic structure of 2H-Sn2

Influence of intrinsic point defects and substitutional impurities (Cl, I-S) on the electronic structure of 2H-Sn2

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Бібліографічні деталі
Дата:2018
Автори: D. I. Bletskan, V. V. Frolova
Формат: Стаття
Мова:English
Опубліковано: 2018
Назва видання:Semiconductor Physics, Quantum Electronics and Optoelectronics
Онлайн доступ:http://jnas.nbuv.gov.ua/article/UJRN-0000941355
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Назва журналу:Library portal of National Academy of Sciences of Ukraine | LibNAS

Репозитарії

Library portal of National Academy of Sciences of Ukraine | LibNAS
id open-sciencenbuvgovua-29862
record_format dspace
spelling open-sciencenbuvgovua-298622024-02-27T21:57:45Z Influence of intrinsic point defects and substitutional impurities (Cl, I-S) on the electronic structure of 2H-Sn2 D. I. Bletskan V. V. Frolova 1560-8034 2018 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0000941355 Article
institution Library portal of National Academy of Sciences of Ukraine | LibNAS
collection Open-Science
language English
series Semiconductor Physics, Quantum Electronics and Optoelectronics
spellingShingle Semiconductor Physics, Quantum Electronics and Optoelectronics
D. I. Bletskan
V. V. Frolova
Influence of intrinsic point defects and substitutional impurities (Cl, I-S) on the electronic structure of 2H-Sn2
format Article
author D. I. Bletskan
V. V. Frolova
author_facet D. I. Bletskan
V. V. Frolova
author_sort D. I. Bletskan
title Influence of intrinsic point defects and substitutional impurities (Cl, I-S) on the electronic structure of 2H-Sn2
title_short Influence of intrinsic point defects and substitutional impurities (Cl, I-S) on the electronic structure of 2H-Sn2
title_full Influence of intrinsic point defects and substitutional impurities (Cl, I-S) on the electronic structure of 2H-Sn2
title_fullStr Influence of intrinsic point defects and substitutional impurities (Cl, I-S) on the electronic structure of 2H-Sn2
title_full_unstemmed Influence of intrinsic point defects and substitutional impurities (Cl, I-S) on the electronic structure of 2H-Sn2
title_sort influence of intrinsic point defects and substitutional impurities (cl, i-s) on the electronic structure of 2h-sn2
publishDate 2018
url http://jnas.nbuv.gov.ua/article/UJRN-0000941355
work_keys_str_mv AT dibletskan influenceofintrinsicpointdefectsandsubstitutionalimpuritiesclisontheelectronicstructureof2hsn2
AT vvfrolova influenceofintrinsicpointdefectsandsubstitutionalimpuritiesclisontheelectronicstructureof2hsn2
first_indexed 2024-03-30T08:28:27Z
last_indexed 2024-03-30T08:28:27Z
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