Influence of intrinsic point defects and substitutional impurities (Cl, I-S) on the electronic structure of 2H-Sn2
Збережено в:
| Дата: | 2018 |
|---|---|
| Автори: | , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
2018
|
| Назва видання: | Semiconductor Physics, Quantum Electronics and Optoelectronics |
| Онлайн доступ: | http://jnas.nbuv.gov.ua/article/UJRN-0000941355 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Репозитарії
Library portal of National Academy of Sciences of Ukraine | LibNAS| _version_ | 1859508067709747200 |
|---|---|
| author | D. I. Bletskan V. V. Frolova |
| author_facet | D. I. Bletskan V. V. Frolova |
| author_sort | D. I. Bletskan |
| collection | Open-Science |
| first_indexed | 2025-07-17T15:45:00Z |
| format | Article |
| id | open-sciencenbuvgovua-29862 |
| institution | Library portal of National Academy of Sciences of Ukraine | LibNAS |
| language | English |
| last_indexed | 2025-07-17T15:45:00Z |
| publishDate | 2018 |
| record_format | dspace |
| series | Semiconductor Physics, Quantum Electronics and Optoelectronics |
| spelling | open-sciencenbuvgovua-298622024-02-27T21:57:45Z Influence of intrinsic point defects and substitutional impurities (Cl, I-S) on the electronic structure of 2H-Sn2 D. I. Bletskan V. V. Frolova 1560-8034 2018 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0000941355 Article |
| spellingShingle | Semiconductor Physics, Quantum Electronics and Optoelectronics D. I. Bletskan V. V. Frolova Influence of intrinsic point defects and substitutional impurities (Cl, I-S) on the electronic structure of 2H-Sn2 |
| title | Influence of intrinsic point defects and substitutional impurities (Cl, I-S) on the electronic structure of 2H-Sn2 |
| title_full | Influence of intrinsic point defects and substitutional impurities (Cl, I-S) on the electronic structure of 2H-Sn2 |
| title_fullStr | Influence of intrinsic point defects and substitutional impurities (Cl, I-S) on the electronic structure of 2H-Sn2 |
| title_full_unstemmed | Influence of intrinsic point defects and substitutional impurities (Cl, I-S) on the electronic structure of 2H-Sn2 |
| title_short | Influence of intrinsic point defects and substitutional impurities (Cl, I-S) on the electronic structure of 2H-Sn2 |
| title_sort | influence of intrinsic point defects and substitutional impurities (cl, i-s) on the electronic structure of 2h-sn2 |
| url | http://jnas.nbuv.gov.ua/article/UJRN-0000941355 |
| work_keys_str_mv | AT dibletskan influenceofintrinsicpointdefectsandsubstitutionalimpuritiesclisontheelectronicstructureof2hsn2 AT vvfrolova influenceofintrinsicpointdefectsandsubstitutionalimpuritiesclisontheelectronicstructureof2hsn2 |