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Influence of intrinsic point defects and substitutional impurities (Cl, I-S) on the electronic structure of 2H-Sn2

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Bibliographic Details
Date:	2018
Main Authors:	D. I. Bletskan, V. V. Frolova
Format:	Article
Language:	English
Published:	2018
Series:	Semiconductor Physics, Quantum Electronics and Optoelectronics
Online Access:	http://jnas.nbuv.gov.ua/article/UJRN-0000941355
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Journal Title:	Library portal of National Academy of Sciences of Ukraine \| LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS

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