Physical properties of silicon sensor structures with photoelectric transformation on the basis of "deep" p–n-junction

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Datum:2017
Hauptverfasser: A. V. Kozinetz, S. V. Litvinenko, V. A. Skryshevsky
Format: Artikel
Sprache:Englisch
Veröffentlicht: 2017
Schriftenreihe:Ukrainian journal of physics
Online Zugang:http://jnas.nbuv.gov.ua/article/UJRN-0000703699
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Назва журналу:Library portal of National Academy of Sciences of Ukraine | LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS
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author A. V. Kozinetz
S. V. Litvinenko
V. A. Skryshevsky
author_facet A. V. Kozinetz
S. V. Litvinenko
V. A. Skryshevsky
author_sort A. V. Kozinetz
collection Open-Science
first_indexed 2025-07-17T18:06:40Z
format Article
id open-sciencenbuvgovua-35987
institution Library portal of National Academy of Sciences of Ukraine | LibNAS
language English
last_indexed 2025-07-17T18:06:40Z
publishDate 2017
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series Ukrainian journal of physics
spelling open-sciencenbuvgovua-359872024-02-29T11:29:44Z Physical properties of silicon sensor structures with photoelectric transformation on the basis of "deep" p–n-junction A. V. Kozinetz S. V. Litvinenko V. A. Skryshevsky 2071-0186 2017 en Ukrainian journal of physics http://jnas.nbuv.gov.ua/article/UJRN-0000703699 Article
spellingShingle Ukrainian journal of physics
A. V. Kozinetz
S. V. Litvinenko
V. A. Skryshevsky
Physical properties of silicon sensor structures with photoelectric transformation on the basis of "deep" p–n-junction
title Physical properties of silicon sensor structures with photoelectric transformation on the basis of "deep" p–n-junction
title_full Physical properties of silicon sensor structures with photoelectric transformation on the basis of "deep" p–n-junction
title_fullStr Physical properties of silicon sensor structures with photoelectric transformation on the basis of "deep" p–n-junction
title_full_unstemmed Physical properties of silicon sensor structures with photoelectric transformation on the basis of "deep" p–n-junction
title_short Physical properties of silicon sensor structures with photoelectric transformation on the basis of "deep" p–n-junction
title_sort physical properties of silicon sensor structures with photoelectric transformation on the basis of "deep" p–n-junction
url http://jnas.nbuv.gov.ua/article/UJRN-0000703699
work_keys_str_mv AT avkozinetz physicalpropertiesofsiliconsensorstructureswithphotoelectrictransformationonthebasisofampquotdeepampquotpnjunction
AT svlitvinenko physicalpropertiesofsiliconsensorstructureswithphotoelectrictransformationonthebasisofampquotdeepampquotpnjunction
AT vaskryshevsky physicalpropertiesofsiliconsensorstructureswithphotoelectrictransformationonthebasisofampquotdeepampquotpnjunction