Physical properties of silicon sensor structures with photoelectric transformation on the basis of "deep" p–n-junction
Збережено в:
| Дата: | 2017 |
|---|---|
| Автори: | , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
2017
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| Назва видання: | Ukrainian journal of physics |
| Онлайн доступ: | http://jnas.nbuv.gov.ua/article/UJRN-0000703699 |
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| Назва журналу: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Репозитарії
Library portal of National Academy of Sciences of Ukraine | LibNAS| _version_ | 1859508989261250560 |
|---|---|
| author | A. V. Kozinetz S. V. Litvinenko V. A. Skryshevsky |
| author_facet | A. V. Kozinetz S. V. Litvinenko V. A. Skryshevsky |
| author_sort | A. V. Kozinetz |
| collection | Open-Science |
| first_indexed | 2025-07-17T18:06:40Z |
| format | Article |
| id | open-sciencenbuvgovua-35987 |
| institution | Library portal of National Academy of Sciences of Ukraine | LibNAS |
| language | English |
| last_indexed | 2025-07-17T18:06:40Z |
| publishDate | 2017 |
| record_format | dspace |
| series | Ukrainian journal of physics |
| spelling | open-sciencenbuvgovua-359872024-02-29T11:29:44Z Physical properties of silicon sensor structures with photoelectric transformation on the basis of "deep" p–n-junction A. V. Kozinetz S. V. Litvinenko V. A. Skryshevsky 2071-0186 2017 en Ukrainian journal of physics http://jnas.nbuv.gov.ua/article/UJRN-0000703699 Article |
| spellingShingle | Ukrainian journal of physics A. V. Kozinetz S. V. Litvinenko V. A. Skryshevsky Physical properties of silicon sensor structures with photoelectric transformation on the basis of "deep" p–n-junction |
| title | Physical properties of silicon sensor structures with photoelectric transformation on the basis of "deep" p–n-junction |
| title_full | Physical properties of silicon sensor structures with photoelectric transformation on the basis of "deep" p–n-junction |
| title_fullStr | Physical properties of silicon sensor structures with photoelectric transformation on the basis of "deep" p–n-junction |
| title_full_unstemmed | Physical properties of silicon sensor structures with photoelectric transformation on the basis of "deep" p–n-junction |
| title_short | Physical properties of silicon sensor structures with photoelectric transformation on the basis of "deep" p–n-junction |
| title_sort | physical properties of silicon sensor structures with photoelectric transformation on the basis of "deep" p–n-junction |
| url | http://jnas.nbuv.gov.ua/article/UJRN-0000703699 |
| work_keys_str_mv | AT avkozinetz physicalpropertiesofsiliconsensorstructureswithphotoelectrictransformationonthebasisofampquotdeepampquotpnjunction AT svlitvinenko physicalpropertiesofsiliconsensorstructureswithphotoelectrictransformationonthebasisofampquotdeepampquotpnjunction AT vaskryshevsky physicalpropertiesofsiliconsensorstructureswithphotoelectrictransformationonthebasisofampquotdeepampquotpnjunction |