Physical properties of silicon sensor structures with photoelectric transformation on the basis of "deep" p–n-junction

Physical properties of silicon sensor structures with photoelectric transformation on the basis of "deep" p–n-junction

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Bibliographic Details
Date:2017
Main Authors: A. V. Kozinetz, S. V. Litvinenko, V. A. Skryshevsky
Format: Article
Language:English
Published: 2017
Series:Ukrainian journal of physics
Online Access:http://jnas.nbuv.gov.ua/article/UJRN-0000703699
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Journal Title:Library portal of National Academy of Sciences of Ukraine | LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS
id open-sciencenbuvgovua-35987
record_format dspace
spelling open-sciencenbuvgovua-359872024-02-29T11:29:44Z Physical properties of silicon sensor structures with photoelectric transformation on the basis of "deep" p–n-junction A. V. Kozinetz S. V. Litvinenko V. A. Skryshevsky 2071-0186 2017 en Ukrainian journal of physics http://jnas.nbuv.gov.ua/article/UJRN-0000703699 Article
institution Library portal of National Academy of Sciences of Ukraine | LibNAS
collection Open-Science
language English
series Ukrainian journal of physics
spellingShingle Ukrainian journal of physics
A. V. Kozinetz
S. V. Litvinenko
V. A. Skryshevsky
Physical properties of silicon sensor structures with photoelectric transformation on the basis of "deep" p–n-junction
format Article
author A. V. Kozinetz
S. V. Litvinenko
V. A. Skryshevsky
author_facet A. V. Kozinetz
S. V. Litvinenko
V. A. Skryshevsky
author_sort A. V. Kozinetz
title Physical properties of silicon sensor structures with photoelectric transformation on the basis of "deep" p–n-junction
title_short Physical properties of silicon sensor structures with photoelectric transformation on the basis of "deep" p–n-junction
title_full Physical properties of silicon sensor structures with photoelectric transformation on the basis of "deep" p–n-junction
title_fullStr Physical properties of silicon sensor structures with photoelectric transformation on the basis of "deep" p–n-junction
title_full_unstemmed Physical properties of silicon sensor structures with photoelectric transformation on the basis of "deep" p–n-junction
title_sort physical properties of silicon sensor structures with photoelectric transformation on the basis of "deep" p–n-junction
publishDate 2017
url http://jnas.nbuv.gov.ua/article/UJRN-0000703699
work_keys_str_mv AT avkozinetz physicalpropertiesofsiliconsensorstructureswithphotoelectrictransformationonthebasisofquotdeepquotpnjunction
AT svlitvinenko physicalpropertiesofsiliconsensorstructureswithphotoelectrictransformationonthebasisofquotdeepquotpnjunction
AT vaskryshevsky physicalpropertiesofsiliconsensorstructureswithphotoelectrictransformationonthebasisofquotdeepquotpnjunction
first_indexed 2025-07-17T18:06:40Z
last_indexed 2025-07-17T18:06:40Z
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