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Physical properties of silicon sensor structures with photoelectric transformation on the basis of &quot;deep&quot; p–n-junction

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Bibliographic Details
Date:	2017
Main Authors:	A. V. Kozinetz, S. V. Litvinenko, V. A. Skryshevsky
Format:	Article
Language:	English
Published:	2017
Series:	Ukrainian journal of physics
Online Access:	http://jnas.nbuv.gov.ua/article/UJRN-0000703699
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Journal Title:	Library portal of National Academy of Sciences of Ukraine \| LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS

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