Cover Image

Model of smoothing roughness on GaAs wafer surface by using nonabrasive chemical-and-mechanical polishing

Saved in:

Bibliographic Details
Date:	2017
Main Authors:	A. V. Fomin, G. A. Pashchenko, Yu. Kravetskyi, I. G. Lutsyshyn
Format:	Article
Language:	English
Published:	2017
Series:	Semiconductor Physics, Quantum Electronics and Optoelectronics
Online Access:	http://jnas.nbuv.gov.ua/article/UJRN-0000714494
Tags:	Add Tag No Tags, Be the first to tag this record!
Journal Title:	Library portal of National Academy of Sciences of Ukraine \| LibNAS

Institution

Library portal of National Academy of Sciences of Ukraine | LibNAS

Similar Items

Model of smoothing roughness on GaAs wafer surface by using nonabrasive chemical-and-mechanical polishing
by: Fomin, A.V., et al.
Published: (2017)

Modeling the process of removal aimed at cut traces on semiconductor wafers by using the method of contactless chemical-and-dynamical polishing
by: G. A. Pashchenko, et al.
Published: (2015)

Balance model for contactless chemo-mechanical polishing of wafers
by: Grigoriev, N.N., et al.
Published: (2002)

Chemical polishing of InAs, InSb, GaAs and GaSb
by: Levchenko, I.V., et al.
Published: (2017)

Surface roughness of optoelectronic components in mechanical polishing
by: Ju. D. Filatov
Published: (2018)

Features of electrochemical processes at the boundary p-GaAs-HF water solution
by: G. A. Pashchenko, et al.
Published: (2018)

Features of electrochemical processes at the boundary p-GaAs-HF water solution
by: Pashchenko, G.A., et al.
Published: (2018)

Отримання мікропоруватих шарів GaAs методом хімічного травлення на підкладках р-GaAs та їхня фотолюмінісценція
by: Paschenko, G. A., et al.
Published: (2012)

Chemical-dynamic polishing of InAs, InSb, GaAs and GaSb crystals with (NH₄)₂Cr₂O₇-HBr-citric acid etching composition
by: Levchenko, I.V., et al.
Published: (2018)

Electron mobility in the GaAs/InGaAs/GaAs quantum wells
by: Vainberg, V.V., et al.
Published: (2013)

Electron mobility in the GaAs/InGaAs/GaAs quantum wells
by: V. V. Vainberg, et al.
Published: (2013)

Polished surface roughness of optoelectronic components made of monocrystalline materials
by: Ju. Filatov, et al.
Published: (2016)

A novel Al₀.₃₃Ga₀.₆₇As/In₀.₁₅Ga₀.₈₅As/GaAs quantum well Hall device grown on (111) GaAs
by: Sghaier, H., et al.
Published: (2012)

GaAs Gunn Diodes with AlAs-GaAs-AlAs Resonance Tunnel Cathode
by: Storozhenko, I. P., et al.
Published: (2013)

Photoconverters with microrelief p-n-junction on a basis of p AlxGa₁₋x-p GaAs-n GaAs-n⁺ GaAs heterojunction
by: Karimov, A.V., et al.
Published: (2005)

Roughness of polished surfaces of optoelectronic elements made of polymeric optical materials
by: Yu. D. Filatov, et al.
Published: (2023)

Effect of γ-irradiation on the structure of high density polyethylene composites with GaAs and GaAs<Te> fillers
by: Gadzhieva, N.N., et al.
Published: (2020)

Influence of ion implantation and annealing on composition and structure of GaAs surface
by: Normuradov, M.T., et al.
Published: (2002)

Дизайн та дослідження фазових характеристик гетероструктури por-Ga2O3/por-GaAs/mono-GaAs
by: Kovachov, S. S., et al.
Published: (2024)

Effect of an InxGa1-xAs-GaAs blocking heterocathode metal contact on the GaAs TED operation
by: Arkusha, Yu. V., et al.
Published: (2013)

Properties of SiO₂-GaAs and Au-Ti-SiO₂-GaAs structures used in production of transmission lines
by: Boltovets, N.S., et al.
Published: (2002)

Recombination characteristics of single-crystalline silicon wafers with a damaged near-surface layer
by: A. V. Sachenko, et al.
Published: (2013)

Structural and composition irregularities in GaAs:Si/GaAs films grown by liquid-phase epitaxy
by: Kladko, V.P., et al.
Published: (2000)

TiB₂/GaAs and Au-TiB₂/GaAs structural transformations at short-term thermal treatment
by: Kryshtab, T.G., et al.
Published: (1999)

Investigations of surface morphology and microrelief of GaAs single crystals by complementary methods
by: Zymierska, D., et al.
Published: (2000)

Optical properties of p-type porous GaAs
by: Kidalov, V.V., et al.
Published: (2005)

Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures
by: S. A. Iliash, et al.
Published: (2016)

Insulator–quantum Hall transition in n-InGaAs/GaAs heterostructures
by: A. P. Savelev, et al.
Published: (2017)

Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures
by: Iliash, S.A., et al.
Published: (2016)

Optical properties of GaAs/AlxGa1-xAs/GaAs quantum dot with off-central impurity driven by electric field
by: Holovatsky, V.A., et al.
Published: (2018)

Особенности квантовых эффектов в 2D-структурах GaAs/n-InGaAs/GaAs с двойными квантовыми ямами
by: Арапов, Ю.Г., et al.
Published: (2007)

Current and electroluminescence intensity oscillations under bipolar lateral electric transport in the double-GaAs/InGaAs/GaAs quantum wells
by: M. M. Vinoslavskii, et al.
Published: (2018)

Current and electroluminescence intensity oscillations under bipolar lateral electric transport in the double-GaAs/InGaAs/GaAs quantum wells
by: Vinoslavskii, M.M., et al.
Published: (2018)

Many-body effects in photoluminescence of heavily doped AlGaAs/InGaAs /GaAs heterostructures
by: Zhuchenko, Z.Ya., et al.
Published: (1999)

Influence of gas adsorption on the impedance of porous GaAs
by: Milovanov, Y.S., et al.
Published: (2017)

Temperature dependences of surface magnetoelastic constants of ultrathin Fe/GaAs (001) films
by: Żuberek, R., et al.
Published: (2012)

Atom dispersion on the rough surface
by: A. S. Dolgov, et al.
Published: (2008)

Recombination characteristics of single-crystalline silicon wafers with a damaged near-surface layer
by: A. V. Sachenko, et al.
Published: (2013)

Polarization-dependent photocurrent in p-GaAs
by: V. R. Rasulov
Published: (2016)

Polarization-dependent photocurrent in p-GaAs
by: V. R. Rasulov
Published: (2016)