Gavrysh, V. I., Tushnitskij, R. B., Krajovskij, J., & Levus, E. V. (2017). Investigation of temperature fields in microelectronic devices of layered structure with through inclusions.
Chicago-Zitierstil (17. Ausg.)Gavrysh, V. I., R. B. Tushnitskij, Ja Krajovskij, und E. V. Levus. Investigation of Temperature Fields in Microelectronic Devices of Layered Structure with Through Inclusions. 2017.
MLA-Zitierstil (8. Ausg.)Gavrysh, V. I., et al. Investigation of Temperature Fields in Microelectronic Devices of Layered Structure with Through Inclusions. 2017.
Achtung: Diese Zitate sind unter Umständen nicht zu 100% korrekt.