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Investigation of temperature fields in microelectronic devices of layered structure with through inclusions

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Bibliographische Detailangaben
Datum:	2017
Hauptverfasser:	V. I. Gavrysh, R. B. Tushnitskij, Ja. Krajovskij, E. V. Levus
Format:	Artikel
Sprache:	Englisch
Veröffentlicht:	2017
Schriftenreihe:	Electronic modeling
Online Zugang:	http://jnas.nbuv.gov.ua/article/UJRN-0000800015
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Назва журналу:	Library portal of National Academy of Sciences of Ukraine \| LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS

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