Features frequency conductivity of silicon sensor cryogenic temperatures

Збережено в:
Бібліографічні деталі
Дата:2016
Автори: A. A. Druzhinin, I. P. Ostrovskij, Ju. N. Khoverko, R. N. Koretskij
Формат: Стаття
Мова:Англійська
Опубліковано: 2016
Назва видання:Technology and design in electronic equipment
Онлайн доступ:http://jnas.nbuv.gov.ua/article/UJRN-0000606229
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Назва журналу:Library portal of National Academy of Sciences of Ukraine | LibNAS

Репозитарії

Library portal of National Academy of Sciences of Ukraine | LibNAS
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author A. A. Druzhinin
I. P. Ostrovskij
Ju. N. Khoverko
R. N. Koretskij
author_facet A. A. Druzhinin
I. P. Ostrovskij
Ju. N. Khoverko
R. N. Koretskij
author_sort A. A. Druzhinin
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spelling open-sciencenbuvgovua-491422024-02-29T12:50:25Z Features frequency conductivity of silicon sensor cryogenic temperatures A. A. Druzhinin I. P. Ostrovskij Ju. N. Khoverko R. N. Koretskij 2225-5818 2016 en Technology and design in electronic equipment http://jnas.nbuv.gov.ua/article/UJRN-0000606229 Article
spellingShingle Technology and design in electronic equipment
A. A. Druzhinin
I. P. Ostrovskij
Ju. N. Khoverko
R. N. Koretskij
Features frequency conductivity of silicon sensor cryogenic temperatures
title Features frequency conductivity of silicon sensor cryogenic temperatures
title_full Features frequency conductivity of silicon sensor cryogenic temperatures
title_fullStr Features frequency conductivity of silicon sensor cryogenic temperatures
title_full_unstemmed Features frequency conductivity of silicon sensor cryogenic temperatures
title_short Features frequency conductivity of silicon sensor cryogenic temperatures
title_sort features frequency conductivity of silicon sensor cryogenic temperatures
url http://jnas.nbuv.gov.ua/article/UJRN-0000606229
work_keys_str_mv AT aadruzhinin featuresfrequencyconductivityofsiliconsensorcryogenictemperatures
AT ipostrovskij featuresfrequencyconductivityofsiliconsensorcryogenictemperatures
AT junkhoverko featuresfrequencyconductivityofsiliconsensorcryogenictemperatures
AT rnkoretskij featuresfrequencyconductivityofsiliconsensorcryogenictemperatures