Heat capacity of bulk boron doped single crystal HPHT diamonds in the temperature range from 2 to 400 K
Saved in:
| Date: | 2016 |
|---|---|
| Main Authors: | S. Tarelkin, V. Bormashov, M. Kuznetsov, S. Buga, S. Terentiev, D. Prikhodko, A. Golovanov, V. Blank |
| Format: | Article |
| Language: | English |
| Published: |
2016
|
| Series: | Superhard Materials |
| Online Access: | http://jnas.nbuv.gov.ua/article/UJRN-0000692902 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Institution
Library portal of National Academy of Sciences of Ukraine | LibNASSimilar Items
-
Heat capacity of bulk boron doped single crystal HPHT diamonds in the temperature range from 2 to 400 K
by: Tarelkin, S., et al.
Published: (2016) -
Low temperature thermal conductivity of heavily boron-doped synthetic diamond: Influence of boron-related structure defects
by: D. Prikhodko, et al.
Published: (2019) -
Low temperature thermal conductivity of heavily boron-doped synthetic diamond: Influence of boron-related structure defects
by: Prikhodko, D., et al.
Published: (2019) -
HFCVD synthesis of boron-doped microcrystalline diamonds
by: Tao Zhang, et al.
Published: (2019) -
Anisotropic charge transport in HPHT diamonds
by: V. I. Grushko, et al.
Published: (2024)