Electrical properties of InSb p-n junctions prepared by diffusion methods
Saved in:
| Date: | 2016 |
|---|---|
| Main Authors: | A. V. Sukach, V. V. Tetyorkin, A. I. Tkachuk |
| Format: | Article |
| Language: | English |
| Published: |
2016
|
| Series: | Semiconductor Physics, Quantum Electronics and Optoelectronics |
| Online Access: | http://jnas.nbuv.gov.ua/article/UJRN-0000714380 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Journal Title: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Institution
Library portal of National Academy of Sciences of Ukraine | LibNASSimilar Items
-
Electrical properties of InSb p-n junctions prepared by diffusion methods
by: Sukach, A.V., et al.
Published: (2016) -
Carrier transport mechanisms in InSb diffusion p-n junctions
by: A. Sukach, et al.
Published: (2014) -
Carrier transport mechanisms in InSb diffusion p-n junctions
by: Sukach, A., et al.
Published: (2014) -
Carrier transport mechanisms in reverse biased InSb p-n junctions
by: A. V. Sukach, et al.
Published: (2015) -
Carrier transport mechanisms in reverse biased InSb p-n junctions
by: Sukach, A.V., et al.
Published: (2015)