Cover Image

Electrical properties of InSb p-n junctions prepared by diffusion methods

Saved in:

Bibliographic Details
Date:	2016
Main Authors:	A. V. Sukach, V. V. Tetyorkin, A. I. Tkachuk
Format:	Article
Language:	English
Published:	2016
Series:	Semiconductor Physics, Quantum Electronics and Optoelectronics
Online Access:	http://jnas.nbuv.gov.ua/article/UJRN-0000714380
Tags:	Add Tag No Tags, Be the first to tag this record!
Journal Title:	Library portal of National Academy of Sciences of Ukraine \| LibNAS

Institution

Library portal of National Academy of Sciences of Ukraine | LibNAS

Similar Items

Electrical properties of InSb p-n junctions prepared by diffusion methods
by: Sukach, A.V., et al.
Published: (2016)

Carrier transport mechanisms in InSb diffusion p-n junctions
by: Sukach, A., et al.
Published: (2014)

Carrier transport mechanisms in InSb diffusion p-n junctions
by: A. Sukach, et al.
Published: (2014)

Carrier transport mechanisms in reverse biased InSb p-n junctions
by: Sukach, A.V., et al.
Published: (2015)

Carrier transport mechanisms in reverse biased InSb p-n junctions
by: A. V. Sukach, et al.
Published: (2015)

S1/f noise and carrier transport mechanisms in InSb p + -n junctions
by: V. V. Tetyorkin, et al.
Published: (2018)

1/f noise and carrier transport mechanisms in InSb p⁺-n junctions
by: Tetyorkin, V.V., et al.
Published: (2018)

Effect of thermal annealing on electrical and photoelectrical properties of n-InSb
by: S. V. Stariy, et al.
Published: (2017)

Effect of thermal annealing on electrical and photoelectrical properties of n-InSb
by: Stariy, S.V., et al.
Published: (2017)

Recombination and trapping of excess carriers in n-InSb
by: V. V. Tetyorkin, et al.
Published: (2024)

Recombination and trapping of excess carriers in n-InSb
by: V. V. Tetyorkin, et al.
Published: (2024)

Trap-assisted conductivity in anodic oxide on InSb
by: G. V. Beketov, et al.
Published: (2017)

Trap-assisted conductivity in anodic oxide on InSb
by: Beketov, G.V., et al.
Published: (2017)

InSb Photodiodes (Review, Part I)
by: A. V. Sukach, et al.
Published: (2016)

InSb Photodiodes (Review, Part II)
by: A. V. Sukach, et al.
Published: (2016)

Tunneling current via dislocations in InAs and InSb infrared photodiodes
by: A. V. Sukach, et al.
Published: (2011)

Trotsenko. InSb photodiodes (Review. Part III)
by: A. V. Sukach, et al.
Published: (2017)

Peculiarities of preparation of CdTe p-n junctions and carrier transport in them
by: A. T. Voroshchenko, et al.
Published: (2017)

Be-ion implanted p-n InSb diode for infrared applications. Modeling, fabrication and characterization
by: V. V. Korotyeyev, et al.
Published: (2018)

Chemical polishing of InAs, InSb, GaAs and GaSb
by: Levchenko, I.V., et al.
Published: (2017)

Be-ion-implanted p-n InSb diode for infrared applications. Modeling, fabrication, and characterization
by: Korotyeyev, V.V., et al.
Published: (2018)

Effect of surface conductivity on electrical properties of mesa-structure InAs p—n-junctions
by: A. V. Sukach, et al.
Published: (2010)

Quantization in magnetoresistance of strained InSb whiskers
by: A. Druzhinin, et al.
Published: (2019)

Quantization in magnetoresistance of strained InSb whiskers
by: Druzhinin, A., et al.
Published: (2019)

Berry phase in strained InSb whiskers
by: Druzhinin, A., et al.
Published: (2018)

Berry phase in strained InSb whiskers
by: A. Druzhinin, et al.
Published: (2018)

InSb фотодіоди (Огляд. Частина I)
by: Сукач, А.В., et al.
Published: (2016)

InSb фотодіоди (Огляд. Частина II)
by: Сукач, А.В., et al.
Published: (2016)

Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures
by: Boltovets, N.S., et al.
Published: (2006)

Исследование спектров фотолюминесценции низкоразмерных структур InSb, сформированных в матрице GaSb
by: Andronova, E. V., et al.
Published: (2011)

Synthesis and properties of semiconductor solid solutions (inSb)₁₋x(CdTe)x
by: Venger, E.F., et al.
Published: (2006)

Polarization dependences of radiation emission by hot carriers in InSb
by: V. M. Bondar, et al.
Published: (2016)

Polarization dependences of radiation emission by hot carriers in InSb
by: V. M. Bondar, et al.
Published: (2016)

Исследование спектров фотолюминесценции низкоразмерных структур InSb, сформированных в матрице GaSb
by: Андронова, Е.В., et al.
Published: (2011)

Использование квантовых точек InSb в термофотовольтаических преобразователях на основе GaSb
by: Андронова, Е.В., et al.
Published: (2003)

Calculation of absorption coefficients of InSb₁₋xBix solid solutions
by: Vyklyuk, J.I., et al.
Published: (2000)

Concerning the depletion width of a radial p-n junction and its influence on electrical properties of the diode
by: V. L. Borblik
Published: (2017)

Электрохимическое внедрение натрия и калия в InSb-, GaSb-электроды из щелочных растворов
by: Омельчук, А.А., et al.
Published: (2008)

Shunt current in InAs diffused photodiodes
by: A. V. Sukach, et al.
Published: (2020)

Shunt current in InAs diffused photodiodes
by: Sukach, A.V., et al.
Published: (2020)