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Drift correction of the analyzed area during the study of the lateral elemental composition distribution in single semiconductor nanostructures by scanning Auger microscopy

Drift correction of the analyzed area during the study of the lateral elemental composition distribution in single semiconductor nanostructures by scanning Auger microscopy

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Bibliographic Details
Main Authors: S. S. Ponomaryov, V. O. Yukhymchuk, Ya. Valakh
Format: Article
Language:English
Published: 2016
Series:Semiconductor Physics, Quantum Electronics and Optoelectronics
Online Access:http://jnas.nbuv.gov.ua/article/UJRN-0000714433
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spelling open-sciencenbuvgovua-521552024-02-29T13:04:54Z Drift correction of the analyzed area during the study of the lateral elemental composition distribution in single semiconductor nanostructures by scanning Auger microscopy S. S. Ponomaryov V. O. Yukhymchuk Ya. Valakh 1560-8034 2016 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0000714433 Article
institution Library portal of National Academy of Sciences of Ukraine | LibNAS
collection Open-Science
language English
series Semiconductor Physics, Quantum Electronics and Optoelectronics
spellingShingle Semiconductor Physics, Quantum Electronics and Optoelectronics
S. S. Ponomaryov
V. O. Yukhymchuk
Ya. Valakh
Drift correction of the analyzed area during the study of the lateral elemental composition distribution in single semiconductor nanostructures by scanning Auger microscopy
format Article
author S. S. Ponomaryov
V. O. Yukhymchuk
Ya. Valakh
author_facet S. S. Ponomaryov
V. O. Yukhymchuk
Ya. Valakh
author_sort S. S. Ponomaryov
title Drift correction of the analyzed area during the study of the lateral elemental composition distribution in single semiconductor nanostructures by scanning Auger microscopy
title_short Drift correction of the analyzed area during the study of the lateral elemental composition distribution in single semiconductor nanostructures by scanning Auger microscopy
title_full Drift correction of the analyzed area during the study of the lateral elemental composition distribution in single semiconductor nanostructures by scanning Auger microscopy
title_fullStr Drift correction of the analyzed area during the study of the lateral elemental composition distribution in single semiconductor nanostructures by scanning Auger microscopy
title_full_unstemmed Drift correction of the analyzed area during the study of the lateral elemental composition distribution in single semiconductor nanostructures by scanning Auger microscopy
title_sort drift correction of the analyzed area during the study of the lateral elemental composition distribution in single semiconductor nanostructures by scanning auger microscopy
publishDate 2016
url http://jnas.nbuv.gov.ua/article/UJRN-0000714433
work_keys_str_mv AT ssponomaryov driftcorrectionoftheanalyzedareaduringthestudyofthelateralelementalcompositiondistributioninsinglesemiconductornanostructuresbyscanningaugermicroscopy
AT voyukhymchuk driftcorrectionoftheanalyzedareaduringthestudyofthelateralelementalcompositiondistributioninsinglesemiconductornanostructuresbyscanningaugermicroscopy
AT yavalakh driftcorrectionoftheanalyzedareaduringthestudyofthelateralelementalcompositiondistributioninsinglesemiconductornanostructuresbyscanningaugermicroscopy
first_indexed 2024-03-30T10:16:10Z
last_indexed 2024-03-30T10:16:10Z
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