Drift correction of the analyzed area during the study of the lateral elemental composition distribution in single semiconductor nanostructures by scanning Auger microscopy
Збережено в:
| Дата: | 2016 |
|---|---|
| Автори: | , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
2016
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| Назва видання: | Semiconductor Physics, Quantum Electronics and Optoelectronics |
| Онлайн доступ: | http://jnas.nbuv.gov.ua/article/UJRN-0000714433 |
| Теги: |
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| Назва журналу: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Репозитарії
Library portal of National Academy of Sciences of Ukraine | LibNAS| _version_ | 1859516187788967936 |
|---|---|
| author | S. S. Ponomaryov V. O. Yukhymchuk Ya. Valakh |
| author_facet | S. S. Ponomaryov V. O. Yukhymchuk Ya. Valakh |
| author_sort | S. S. Ponomaryov |
| collection | Open-Science |
| first_indexed | 2025-07-17T22:57:52Z |
| format | Article |
| id | open-sciencenbuvgovua-52155 |
| institution | Library portal of National Academy of Sciences of Ukraine | LibNAS |
| language | English |
| last_indexed | 2025-07-17T22:57:52Z |
| publishDate | 2016 |
| record_format | dspace |
| series | Semiconductor Physics, Quantum Electronics and Optoelectronics |
| spelling | open-sciencenbuvgovua-521552024-02-29T13:04:54Z Drift correction of the analyzed area during the study of the lateral elemental composition distribution in single semiconductor nanostructures by scanning Auger microscopy S. S. Ponomaryov V. O. Yukhymchuk Ya. Valakh 1560-8034 2016 en Semiconductor Physics, Quantum Electronics and Optoelectronics http://jnas.nbuv.gov.ua/article/UJRN-0000714433 Article |
| spellingShingle | Semiconductor Physics, Quantum Electronics and Optoelectronics S. S. Ponomaryov V. O. Yukhymchuk Ya. Valakh Drift correction of the analyzed area during the study of the lateral elemental composition distribution in single semiconductor nanostructures by scanning Auger microscopy |
| title | Drift correction of the analyzed area during the study of the lateral elemental composition distribution in single semiconductor nanostructures by scanning Auger microscopy |
| title_full | Drift correction of the analyzed area during the study of the lateral elemental composition distribution in single semiconductor nanostructures by scanning Auger microscopy |
| title_fullStr | Drift correction of the analyzed area during the study of the lateral elemental composition distribution in single semiconductor nanostructures by scanning Auger microscopy |
| title_full_unstemmed | Drift correction of the analyzed area during the study of the lateral elemental composition distribution in single semiconductor nanostructures by scanning Auger microscopy |
| title_short | Drift correction of the analyzed area during the study of the lateral elemental composition distribution in single semiconductor nanostructures by scanning Auger microscopy |
| title_sort | drift correction of the analyzed area during the study of the lateral elemental composition distribution in single semiconductor nanostructures by scanning auger microscopy |
| url | http://jnas.nbuv.gov.ua/article/UJRN-0000714433 |
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