Cover Image

Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures

Saved in:

Bibliographic Details
Date:	2016
Main Authors:	S. A. Iliash, S. V. Kondratenko, A. S. Yakovliev, V. P. Kunets, Yu. I. Mazur, G. J. Salamo
Format:	Article
Language:	English
Published:	2016
Series:	Semiconductor Physics, Quantum Electronics and Optoelectronics
Online Access:	http://jnas.nbuv.gov.ua/article/UJRN-0000714538
Tags:	Add Tag No Tags, Be the first to tag this record!
Journal Title:	Library portal of National Academy of Sciences of Ukraine \| LibNAS

Institution

Library portal of National Academy of Sciences of Ukraine | LibNAS

Similar Items

Thermally stimulated conductivity in InGaAs/GaAs quantum wire heterostructures
by: Iliash, S.A., et al.
Published: (2016)

Insulator–quantum Hall transition in n-InGaAs/GaAs heterostructures
by: A. P. Savelev, et al.
Published: (2017)

Electron mobility in the GaAs/InGaAs/GaAs quantum wells
by: Vainberg, V.V., et al.
Published: (2013)

Electron mobility in the GaAs/InGaAs/GaAs quantum wells
by: V. V. Vainberg, et al.
Published: (2013)

Magnetooptics of heterostructures with InGaAs/GaAs quantum well and a ferromagnetic Mn deltalayer
by: S. V. Zajtsev
Published: (2012)

Many-body effects in photoluminescence of heavily doped AlGaAs/InGaAs /GaAs heterostructures
by: Zhuchenko, Z.Ya., et al.
Published: (1999)

Pseudomorphic modulation-doped AlGaAs/InGaAs/GaAs heterostructures with strong manifestation of many-body effects
by: Masselink, W.T., et al.
Published: (2000)

Current and electroluminescence intensity oscillations under bipolar lateral electric transport in the double-GaAs/InGaAs/GaAs quantum wells
by: M. M. Vinoslavskii, et al.
Published: (2018)

Current and electroluminescence intensity oscillations under bipolar lateral electric transport in the double-GaAs/InGaAs/GaAs quantum wells
by: Vinoslavskii, M.M., et al.
Published: (2018)

Temperature dependence of quantum lifetime in n-InGaAs/GaAs structures with double stronglycoupled quantum wells
by: Ju. G. Arapov, et al.
Published: (2013)

Plateau–plateau transitions in the quantum Hall regime for a single quantum well heterostructure n-InGaAs/GaAs before and after IR illumination
by: Ju. G. Arapov, et al.
Published: (2015)

Localization and interference induced quantum effects at low magnetic fields in InGaAs/GaAs structures
by: A. P. Savelyev, et al.
Published: (2021)

Deep attachment levels in In0.4Ga0.6As/GaAs heterostructures with quantum dots
by: O. V. Vakulenko, et al.
Published: (2011)

The effect of infrared illumination on quantum magnetotransport in strongly coupled n-InGaAs/GaAs double quantum wells
by: S. V. Gudina, et al.
Published: (2013)

Комплексное легирование слоев GaAs, InGaAs при жидкофазной эпитаксии
by: Круковский, С.И.
Published: (2002)

Солнечные элементы на основе тандемных гетероструктур GaAs-InGaAs-AlGaAs
by: Круковский, С.И., et al.
Published: (2003)

Quantum magnetotransport in n-InGaAs/GaAs structures under change of electron density by infrared illumination
by: Ju. G. Arapov, et al.
Published: (2015)

Модули солнечных элементов на основе тандемных гетероструктур GaAs-InGaAs-AlGaAs
by: Круковский, С.И., et al.
Published: (2004)

Получение тандемных гетероструктур GaAs—InGaAs—AlGaAs для фотопреобразователей солнечной энергии
by: Николаенко, Ю.Е., et al.
Published: (2002)

Temperature dependence of band width of delocalized states for n-InGaAs/GaAs in the quantum Hall effect regime
by: Ju. G. Arapov, et al.
Published: (2013)

Особенности квантовых эффектов в 2D-структурах GaAs/n-InGaAs/GaAs с двойными квантовыми ямами
by: Арапов, Ю.Г., et al.
Published: (2007)

The effect of the barrier width between coupled double quantum wells of GaAs/InGaAs/GaAs on the bipolar transport and THz emission of the hot carriers in the lateral electric field
by: M. N. Vinoslavskij, et al.
Published: (2020)

Квантовая эффективность резонансного InGaAs/GaAs фотодетектора для сверхкоротких оптических соединений
by: Грищенко, С.В., et al.
Published: (2007)

Excitonic parameters of InxGa1-xAs−GaAs heterostructures with quantum wells at low temperatures
by: N. M. Litovchenko, et al.
Published: (2013)

Excitonic parameters of InxGa1-xAs−GaAs heterostructures with quantum wells at low temperatures
by: N. M. Lytovchenko, et al.
Published: (2013)

2D magnetofermionic condensate in GaAs/AlGaAs heterostructures
by: L. V. Kulik, et al.
Published: (2017)

A novel Al₀.₃₃Ga₀.₆₇As/In₀.₁₅Ga₀.₈₅As/GaAs quantum well Hall device grown on (111) GaAs
by: Sghaier, H., et al.
Published: (2012)

Anisotropy of elastic deformations in multilayer (In,Ga)As/GaAs structures with quantum wires: X-ray diffractometry study
by: Strelchuk, V.V., et al.
Published: (2005)

Study on phase characteristics of heterostructure por-Ga2O3/GaAs
by: S. S. Kovachov, et al.
Published: (2024)

Coherence of Bose–Einstein condensate of dipolar excitons in GaAs/AlGaAs heterostructure
by: A. V. Gorbunov, et al.
Published: (2016)

Effect of quantum dot shape of the GaAs/AlAs heterostructure on interlevel hole light absorption
by: Boichuk, V.I., et al.
Published: (2013)

Miniband electrical conductivity in superlattices of spherical InAs/GaAs quantum dots
by: V. I. Boichuk, et al.
Published: (2017)

Miniband electrical conductivity in superlattices of spherical InAs/GaAs quantum dots
by: V. I. Boichuk, et al.
Published: (2017)

Фазовый переход из диэлектрического состояния в фазу квантового эффекта Холла в гетероструктурах n-InGaAs/GaAs
by: Савельев, А.П., et al.
Published: (2017)

Квантовый магнитотранспорт в структурах n-InGaAs/GaAs при изменении концентрации электронов под воздействием инфракрасного излучения
by: Арапов, Ю.Г., et al.
Published: (2015)

Optical properties of GaAs/AlxGa1-xAs/GaAs quantum dot with off-central impurity driven by electric field
by: Holovatsky, V.A., et al.
Published: (2018)

Температурная зависимость ширины полосы делокализованных состояний в наноструктурах n-InGaAs/GaAs в режиме квантового эффекта Холла
by: Арапов, Ю.Г., et al.
Published: (2013)

TiB₂/GaAs and Au-TiB₂/GaAs structural transformations at short-term thermal treatment
by: Kryshtab, T.G., et al.
Published: (1999)

A novel Al0. 33Ga0. 67As/In0. 15Ga0. 85As/GaAs quantum well Hall device grown on (111) GaAs)
by: H. Sghaier, et al.
Published: (2012)

Влияние инфракрасного излучения на квантовый магнитотранспорт в структурах n-InGaAs/GaAs с двумя сильно связанными квантовыми ямами
by: Гудина, С.В., et al.
Published: (2013)