Effect of Gas environment on electrophysical parameters of heterojunctions on the basis of schottky barrier with nano-structured (95% In2O3 + 5% SnO2) Oxide films
Збережено в:
| Дата: | 2016 |
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| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | Англійська |
| Опубліковано: |
2016
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| Назва видання: | Ukrainian journal of physics |
| Онлайн доступ: | http://jnas.nbuv.gov.ua/article/UJRN-0000727778 |
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| Назва журналу: | Library portal of National Academy of Sciences of Ukraine | LibNAS |
Репозитарії
Library portal of National Academy of Sciences of Ukraine | LibNAS| _version_ | 1859516399108489216 |
|---|---|
| author | V. V. Ilchenko O. M. Kostiukevych V. V. Lendiel V. I. Radko N. S. Goloborodko |
| author_facet | V. V. Ilchenko O. M. Kostiukevych V. V. Lendiel V. I. Radko N. S. Goloborodko |
| author_sort | V. V. Ilchenko |
| collection | Open-Science |
| first_indexed | 2025-07-17T23:04:11Z |
| format | Article |
| id | open-sciencenbuvgovua-52431 |
| institution | Library portal of National Academy of Sciences of Ukraine | LibNAS |
| language | English |
| last_indexed | 2025-07-17T23:04:11Z |
| publishDate | 2016 |
| record_format | dspace |
| series | Ukrainian journal of physics |
| spelling | open-sciencenbuvgovua-524312024-02-29T13:06:35Z Effect of Gas environment on electrophysical parameters of heterojunctions on the basis of schottky barrier with nano-structured (95% In2O3 + 5% SnO2) Oxide films V. V. Ilchenko O. M. Kostiukevych V. V. Lendiel V. I. Radko N. S. Goloborodko 2071-0186 2016 en Ukrainian journal of physics http://jnas.nbuv.gov.ua/article/UJRN-0000727778 Article |
| spellingShingle | Ukrainian journal of physics V. V. Ilchenko O. M. Kostiukevych V. V. Lendiel V. I. Radko N. S. Goloborodko Effect of Gas environment on electrophysical parameters of heterojunctions on the basis of schottky barrier with nano-structured (95% In2O3 + 5% SnO2) Oxide films |
| title | Effect of Gas environment on electrophysical parameters of heterojunctions on the basis of schottky barrier with nano-structured (95% In2O3 + 5% SnO2) Oxide films |
| title_full | Effect of Gas environment on electrophysical parameters of heterojunctions on the basis of schottky barrier with nano-structured (95% In2O3 + 5% SnO2) Oxide films |
| title_fullStr | Effect of Gas environment on electrophysical parameters of heterojunctions on the basis of schottky barrier with nano-structured (95% In2O3 + 5% SnO2) Oxide films |
| title_full_unstemmed | Effect of Gas environment on electrophysical parameters of heterojunctions on the basis of schottky barrier with nano-structured (95% In2O3 + 5% SnO2) Oxide films |
| title_short | Effect of Gas environment on electrophysical parameters of heterojunctions on the basis of schottky barrier with nano-structured (95% In2O3 + 5% SnO2) Oxide films |
| title_sort | effect of gas environment on electrophysical parameters of heterojunctions on the basis of schottky barrier with nano-structured (95% in2o3 + 5% sno2) oxide films |
| url | http://jnas.nbuv.gov.ua/article/UJRN-0000727778 |
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