Effect of Gas environment on electrophysical parameters of heterojunctions on the basis of schottky barrier with nano-structured (95% In2O3 + 5% SnO2) Oxide films

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Datum:2016
Hauptverfasser: V. V. Ilchenko, O. M. Kostiukevych, V. V. Lendiel, V. I. Radko, N. S. Goloborodko
Format: Artikel
Sprache:Englisch
Veröffentlicht: 2016
Schriftenreihe:Ukrainian journal of physics
Online Zugang:http://jnas.nbuv.gov.ua/article/UJRN-0000727778
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Назва журналу:Library portal of National Academy of Sciences of Ukraine | LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS
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author V. V. Ilchenko
O. M. Kostiukevych
V. V. Lendiel
V. I. Radko
N. S. Goloborodko
author_facet V. V. Ilchenko
O. M. Kostiukevych
V. V. Lendiel
V. I. Radko
N. S. Goloborodko
author_sort V. V. Ilchenko
collection Open-Science
first_indexed 2025-07-17T23:04:11Z
format Article
id open-sciencenbuvgovua-52431
institution Library portal of National Academy of Sciences of Ukraine | LibNAS
language English
last_indexed 2025-07-17T23:04:11Z
publishDate 2016
record_format dspace
series Ukrainian journal of physics
spelling open-sciencenbuvgovua-524312024-02-29T13:06:35Z Effect of Gas environment on electrophysical parameters of heterojunctions on the basis of schottky barrier with nano-structured (95% In2O3 + 5% SnO2) Oxide films V. V. Ilchenko O. M. Kostiukevych V. V. Lendiel V. I. Radko N. S. Goloborodko 2071-0186 2016 en Ukrainian journal of physics http://jnas.nbuv.gov.ua/article/UJRN-0000727778 Article
spellingShingle Ukrainian journal of physics
V. V. Ilchenko
O. M. Kostiukevych
V. V. Lendiel
V. I. Radko
N. S. Goloborodko
Effect of Gas environment on electrophysical parameters of heterojunctions on the basis of schottky barrier with nano-structured (95% In2O3 + 5% SnO2) Oxide films
title Effect of Gas environment on electrophysical parameters of heterojunctions on the basis of schottky barrier with nano-structured (95% In2O3 + 5% SnO2) Oxide films
title_full Effect of Gas environment on electrophysical parameters of heterojunctions on the basis of schottky barrier with nano-structured (95% In2O3 + 5% SnO2) Oxide films
title_fullStr Effect of Gas environment on electrophysical parameters of heterojunctions on the basis of schottky barrier with nano-structured (95% In2O3 + 5% SnO2) Oxide films
title_full_unstemmed Effect of Gas environment on electrophysical parameters of heterojunctions on the basis of schottky barrier with nano-structured (95% In2O3 + 5% SnO2) Oxide films
title_short Effect of Gas environment on electrophysical parameters of heterojunctions on the basis of schottky barrier with nano-structured (95% In2O3 + 5% SnO2) Oxide films
title_sort effect of gas environment on electrophysical parameters of heterojunctions on the basis of schottky barrier with nano-structured (95% in2o3 + 5% sno2) oxide films
url http://jnas.nbuv.gov.ua/article/UJRN-0000727778
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