Effect of Gas environment on electrophysical parameters of heterojunctions on the basis of schottky barrier with nano-structured (95% In2O3 + 5% SnO2) Oxide films

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Bibliographic Details
Date:2016
Main Authors: V. V. Ilchenko, O. M. Kostiukevych, V. V. Lendiel, V. I. Radko, N. S. Goloborodko
Format: Article
Language:English
Published: 2016
Series:Ukrainian journal of physics
Online Access:http://jnas.nbuv.gov.ua/article/UJRN-0000727778
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Journal Title:Library portal of National Academy of Sciences of Ukraine | LibNAS

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Library portal of National Academy of Sciences of Ukraine | LibNAS
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spelling open-sciencenbuvgovua-524312024-02-29T13:06:35Z Effect of Gas environment on electrophysical parameters of heterojunctions on the basis of schottky barrier with nano-structured (95% In2O3 + 5% SnO2) Oxide films V. V. Ilchenko O. M. Kostiukevych V. V. Lendiel V. I. Radko N. S. Goloborodko 2071-0186 2016 en Ukrainian journal of physics http://jnas.nbuv.gov.ua/article/UJRN-0000727778 Article
institution Library portal of National Academy of Sciences of Ukraine | LibNAS
collection Open-Science
language English
series Ukrainian journal of physics
spellingShingle Ukrainian journal of physics
V. V. Ilchenko
O. M. Kostiukevych
V. V. Lendiel
V. I. Radko
N. S. Goloborodko
Effect of Gas environment on electrophysical parameters of heterojunctions on the basis of schottky barrier with nano-structured (95% In2O3 + 5% SnO2) Oxide films
format Article
author V. V. Ilchenko
O. M. Kostiukevych
V. V. Lendiel
V. I. Radko
N. S. Goloborodko
author_facet V. V. Ilchenko
O. M. Kostiukevych
V. V. Lendiel
V. I. Radko
N. S. Goloborodko
author_sort V. V. Ilchenko
title Effect of Gas environment on electrophysical parameters of heterojunctions on the basis of schottky barrier with nano-structured (95% In2O3 + 5% SnO2) Oxide films
title_short Effect of Gas environment on electrophysical parameters of heterojunctions on the basis of schottky barrier with nano-structured (95% In2O3 + 5% SnO2) Oxide films
title_full Effect of Gas environment on electrophysical parameters of heterojunctions on the basis of schottky barrier with nano-structured (95% In2O3 + 5% SnO2) Oxide films
title_fullStr Effect of Gas environment on electrophysical parameters of heterojunctions on the basis of schottky barrier with nano-structured (95% In2O3 + 5% SnO2) Oxide films
title_full_unstemmed Effect of Gas environment on electrophysical parameters of heterojunctions on the basis of schottky barrier with nano-structured (95% In2O3 + 5% SnO2) Oxide films
title_sort effect of gas environment on electrophysical parameters of heterojunctions on the basis of schottky barrier with nano-structured (95% in2o3 + 5% sno2) oxide films
publishDate 2016
url http://jnas.nbuv.gov.ua/article/UJRN-0000727778
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first_indexed 2025-07-17T23:04:11Z
last_indexed 2025-07-17T23:04:11Z
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